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EP0032801A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of dicing a semiconductor wafer

Assignee: Toshiba Corp
•
Filing: 1981-01-13
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Granted: —
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Expires: 2001-01-13
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Abstract

Abstract A method of dicing a semiconductor wafer in which a physical discontinuity is formed on the surface of the wafer on both sides of a dicing line to limit the spreading of cracks and chips generated during dicing. Thereafter, the semiconductor wafer is diced to separate the pellets.

Inventors

  • 👤 Masahiro Abe
  • 👤 Masafumi Miyagawa
  • 👤 Hatsuo Nakamura
  • 👤 Toshio Yonezawa

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-28 03:57
CPC Classifications
H; H10; H10P; H10P52/00; Y; Y10; Y10S; Y10S148/00; Y10S148/028; Y10T; Y10T225/00; Y10T225/10; Y10T225/12; Y10T29/00; Y10T29/49; Y10T29/49789; Y10T29/4979; Y10T29/49792

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 36 words
A method of preparing a semiconductor wafer for division into pellets comprising the steps of: forming a physical discontunity on both sides of a predetermined dicing line; and dicing said semiconductor wafer along said dicing line.
Claim 2
Independent Claim 36 words
A method of preparing a semiconductor wafer for division into pellets comprising the steps of: forming a physical discontunity on both sides of a predetermined dicing line; and dicing said semiconductor wafer along said dicing line.
Claim 3
Dependent Claim 34 words
A method according to claim 1, wherein said forming step comprises the step of introducing a change in the level of the surface of said semiconductor wafer on both sides of said dicing line.
Claim 4
Dependent Claim 27 words
A method according to claim 1 or claim 2, wherein said forming step comprises the step of forming a groove on both sides of said dicing line.
Claim 5
Dependent Claim 30 words
A method according to claim 1 or claim 2 wherein said forming step comprises the step of forming a protuberance over said dicing line and extending beyond said dicing line.
Claim 6
Dependent Claim 36 words
A method according to claim 1 or claim 2, wherein said forming step comprises the step of forming a groove along said dicing line, said groove having at least a portion broader than said dicing line.
Claim 7
Dependent Claim 30 words
A method according to claim 1, wherein said forming step comprises the step of disposing a material different to the material of said wafer over the surface of said wafer.

References Cited (Backward Citations)

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