EP0034706A2
Expired / Lapsed
EP
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Process and apparatus for ion etching or for plasma C.V.D.
Assignee: IDT Europe GmbH
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Filing: 1981-01-22
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Granted: —
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Expires: 2001-01-22
Abstract
Abstract 1. Process for plasma etching or for plasma chemical-vapour deposition in a receptacle in which a plasma is formed between two electrodes, characterized in that the plasma extends mainly between two or more electrodes which are arranged parallel to one another at a distance dependent on the discharge conditions and are covered with substrates and which are subjected to the same potential, and in that the receptacle surrounding the electrodes and/or auxiliary electrode surrounding these electrodes are subjected to the other potential.
Inventors
- 👤 Georg Prof.Dr. Habil. Rudakoff
- 👤 Hans-Jürgen Dr.sc. Tiller
- 👤 Roland Dipl.-Phys. Göbel
- 👤 Reinhard Dipl-Phys. Voigt
- 👤 Klaus Dr. Dipl.-Ing. Schade
- 👤 Wolfgang Kosch
- 👤 Konrad Dipl.-Phys. Gehmlich
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 05:28
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; C23F; C23F4/00; H01J37/32431; H01J37/32532; H01J37/32587
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