EP0048175A2
Expired / Lapsed
EP
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Semiconductor device and method of manufacturing the same
Assignee: Hitachi Ltd
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Filing: 1981-09-16
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Granted: —
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Expires: 2001-09-16
Abstract
Abstract A semiconductor device has a plurality of elements isolated by a groove (10) which is at least partly filled with insulating material. To avoid risk of breakage of conductive layers later formed on the groove, the groove has a gentle slope (17) at its upper side wall portions, and a steep slope (18) at its lower side wall portions. This groove (10) provides gentle steps at its mouth but occupies small area on the substrate (1), thus enabling an extremely high-density integrated circuit to be formed.
Inventors
- 👤 Yoichi Tamaki
- 👤 Tokuo Kure
- 👤 Akira Sato
- 👤 Hisayuki Higuchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 12:25
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/0145; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/085; Y10S148/161; Y10S148/168
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
68 words
A semiconductor device having a plurality of elements formed in a surface region of a semiconductor substrate (1, 6, 7) and isolated from each other by a groove (10) formed in said substrate, and at least partly filled with insulating material (11, 12), characterized in that said groove has a gentle slope at its upper side wall portions and a steep slope at its lower side wall portions.
Claim 2
Dependent Claim
68 words
A semiconductor device having a plurality of elements formed in a surface region of a semiconductor substrate (1, 6, 7) and isolated from each other by a groove (10) formed in said substrate, and at least partly filled with insulating material (11, 12), characterized in that said groove has a gentle slope at its upper side wall portions and a steep slope at its lower side wall portions.
Claim 3
Dependent Claim
37 words
A semiconductor device according to Claim 1, wherein the upper and lower slopes of said groove are at about 30° to 65° and 70° to 90° respectively with respect to the main surface of said semiconductor substrate.
Claim 4
Dependent Claim
31 words
A semiconductor device according to Claim 1 or Claim 2, wherein insulating material is filled into the groove, on the wall surface of which an insulating film has previously been deposited.
Claim 5
Dependent Claim
29 words
A semiconductor device according to Claim 3, wherein said insulating material is selected from Si0 2 , Si 3 N 4 , Al 2 O 3 or phosphosilicate glass.
Claim 6
Dependent Claim
34 words
A semiconductor device according to Claim 1 or Claim 2, wherein said groove (10) has an insulating film (11, 12) deposited on its inner wall surface and is thereafter filled with polycrystalline silicon (13).
Claim 7
Dependent Claim
15 words
A semiconductor device according to Claim 5, wherein said insulating film is a single layer.
Claim 8
Dependent Claim
16 words
A semiconductor device according to Claim 5, wherein said insulating film has two layers (11, 12).
Claim 9
Dependent Claim
22 words
A semiconductor device according to Claim 7, wherein said two layers are made of SiO 2 and Si 3 N 4 respectively.
Claim 10
Dependent Claim
28 words
A semiconductor device according to any one of Claims 5 to 8, wherein said insulating film is deposited on the side walls and bottom wall of said groove.
Claim 11
Dependent Claim
26 words
A semiconductor device according to any one of Claims 5 to 8, wherein said insulating film is deposited only on the side walls of said groove.
Claim 12
Independent Claim
160 words
A method of manufacturing a semiconductor device comprising the steps of: (1) depositing a silicon oxide film (8) and a silicon nitride film (9) in a multilayer on the surface of a semiconductor substrate (1, 6, 7); (2) etching away an undesired portion of said silicon nitride film; (3) etching away the exposed portion of said silicon oxide film and further over-etching to form a pent roof (15) of said silicon nitride; (4) . etching said semiconductor substrate with a mask of said silicon oxide to form a groove of which the side wall (17) is sloped; (5) etching said semiconductor substrate with a mask of said silicon nitride to form a groove (10) having a gentle slope at the upper wall and a steep slope at the lower wall; (6) covering the wall surface of said groove with an insulating film (11, 12); (7) etching away said silicon nitride; and (8) filling a polycrystalline silicon (13) in said groove.
Claim 13
Independent Claim
160 words
A method of manufacturing a semiconductor device comprising the steps of: (1) depositing a silicon oxide film (8) and a silicon nitride film (9) in a multilayer on the surface of a semiconductor substrate (1, 6, 7); (2) etching away an undesired portion of said silicon nitride film; (3) etching away the exposed portion of said silicon oxide film and further over-etching to form a pent roof (15) of said silicon nitride; (4) . etching said semiconductor substrate with a mask of said silicon oxide to form a groove of which the side wall (17) is sloped; (5) etching said semiconductor substrate with a mask of said silicon nitride to form a groove (10) having a gentle slope at the upper wall and a steep slope at the lower wall; (6) covering the wall surface of said groove with an insulating film (11, 12); (7) etching away said silicon nitride; and (8) filling a polycrystalline silicon (13) in said groove.
Claim 14
Dependent Claim
16 words
A method according to Claim 11, wherein said semiconductor substrate is a (100) oriented silicon substrate.
Claim 15
Dependent Claim
19 words
A method according to Claimll or Claim 12, wherein said pent roof is about 0.3 to 1.0 µm long.
Claim 16
Independent Claim
23 words
A method according to any one of Claims 11 to 13, wherein said etching at step (4) is performed with an alkaline etchant.
Claim 17
Independent Claim
24 words
A method according to any one of Claims 11 to 14, wherein said etching at step (5) is performed by reactive spatter etching process.
Claim 18
Independent Claim
166 words
A method of manufacturing a semiconductor device comprising the steps of: (1) depositing an insulating film (30) on the main surface of a semiconductor substrate (1, 6, 7); (2) etching away an undesired portion of said insulating film; (3) etching with use of a mask of said insulating film to form a groove having a sloped side wall (31) and a bottom wall approximately in parallel with said main surface; (4) forming a second insulating film (32) to cover at least the surface of said groove; (5) etching said second insulating film to expose the bottom of said groove and leave the part (33) of said second insulating film on said side wall of the groove; and (6) etching the bottom of said groove with use of a mask of the second insulating film (33) left on the side wall of said groove to form a groove (35) having a gentle slope at the upper side wall and a steep slope at the lower side wall.
Claim 19
Independent Claim
166 words
A method of manufacturing a semiconductor device comprising the steps of: (1) depositing an insulating film (30) on the main surface of a semiconductor substrate (1, 6, 7); (2) etching away an undesired portion of said insulating film; (3) etching with use of a mask of said insulating film to form a groove having a sloped side wall (31) and a bottom wall approximately in parallel with said main surface; (4) forming a second insulating film (32) to cover at least the surface of said groove; (5) etching said second insulating film to expose the bottom of said groove and leave the part (33) of said second insulating film on said side wall of the groove; and (6) etching the bottom of said groove with use of a mask of the second insulating film (33) left on the side wall of said groove to form a groove (35) having a gentle slope at the upper side wall and a steep slope at the lower side wall.
References Cited (Backward Citations)
No citation records indexed.
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