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EP0051902A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor integrated circuit incorporating an active device and a distributed resistor-capacitor device

Assignee: Leland Stanford Junior University
•
Filing: 1979-12-21
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Granted: —
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Expires: 1999-12-21
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Abstract

Abstract A distributed resistor-capacitor device which is highly reproducible with near ideal electrical characteristics comprises a doped semiconductor body forming a substrate (108), an insulative layer (104) on a major surface of the substrate, and a doped polycrystalline semiconductor material (102) on the insulating layer. The polycrystalline layer (102) is the resistor and co-operates with the substrate as the capacitor. The device is incorporated in an integrated circuit together with a field- effect transistor (121) or a bipolar junction transistor. The body may comprise a single crystalline silicon substrate with the layer (104) comprising a silicon oxide. The semiconductor material (102) may be polycrystalline silicon.

Inventors

  • 👤 Levy Gerzberg
  • 👤 James D. Meindl

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-02 05:17
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/60; H10D1/62; H10D1/66; H10D84/00; H10D84/201; H10D84/204; H10D84/206; H10D84/60; H10D84/611; H10D84/613

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 89 words
A.semiconductor integrated circuit comprising a semiconductor body, an active electrical device formed in said semiconductor body adjacent to one major surface of said body, and a distributed resistor-capacitor element formed adjacent to said one major surface and adjacent to said active device, characterised in that said distributed resistor-capacitor element includes a doped region of said semiconductor body forming a capacitor plate, an insulative material on said major surface overlying said doped region, and a resistive material formed on said insulative material, said resistive material comprising doped polycrustalline semiconductor material.
Claim 2
Dependent Claim 89 words
A.semiconductor integrated circuit comprising a semiconductor body, an active electrical device formed in said semiconductor body adjacent to one major surface of said body, and a distributed resistor-capacitor element formed adjacent to said one major surface and adjacent to said active device, characterised in that said distributed resistor-capacitor element includes a doped region of said semiconductor body forming a capacitor plate, an insulative material on said major surface overlying said doped region, and a resistive material formed on said insulative material, said resistive material comprising doped polycrustalline semiconductor material.
Claim 3
Dependent Claim 19 words
A semiconductor integrated circuit as claimed in Claim 1 including first and second electrical contacts to said resistive material.
Claim 4
Dependent Claim 21 words
A semiconductor integrated circuit as claimed in Claim 1 or Claim 2 including an electrical capacitor contact to said doped region.
Claim 5
Dependent Claim 60 words
A semiconductor integrated circuit as claimed in Claim 2 or Claim 3 wherein the active electrical device is a silicon gate field effect transistor and the distributed resistor-capacitor element.comprises a high resistance polycrystalline silicon layer, forming said resistive material, overlying a silicon oxide layer, forming said insulative material, and a N+ diffused region, forming said doped region, in P substrate.
Claim 6
Dependent Claim 37 words
A semiconductor integrated circuit as claimed in Claim 4 wherein said first and second electrical contacts comprise N+ contacts diffused into the polycrystalline silicon layer simultaneously with N+ source and drain regions of the field effect transistor.
Claim 7
Dependent Claim 22 words
A semiconductor integrated circuit as claimed in Claim 2 or Claim 3 wherein the active electrical device is a bipolar junction transistor.

References Cited (Backward Citations)

DE1196295B Cited
US3714522A Cited
US3576478A Cited
US4077044A Cited

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