EP0071203A2
Expired / Lapsed
EP
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Mask for thermal oxidation and method of forming dielectric isolation surrounding regions
Assignee: International Business Machines Corp
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Filing: 1982-07-23
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Granted: —
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Expires: 2002-07-23
Abstract
Abstract The invention relates to a mask for thermal oxidation and a method for forming dielectric isolation surrounding regions. A mask and a method for eliminating "bird's head and beak" in recessed oxide isolation are described. The ROI mask uses a silicon oxynitride layer confronting the substrate with a silicon nitride layer convering the silicon oxynitride layer.
Inventors
- 👤 Bernard Michael Kemlage
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 03:12
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/61; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6322; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/0124; H10W10/0125; H10W10/10; H10W10/13; H10P14/66; H10P14/662; H10P14/6922; H10P14/6927; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
32 words
Mask for thermal oxidation in recessed oxide isolation of a substrate comprising; a stack having a silicon oxynitride layer confronting said substrate and a silicon nitride layer covering the silicon oxynitride layer.
Claim 2
Dependent Claim
32 words
Mask for thermal oxidation in recessed oxide isolation of a substrate comprising; a stack having a silicon oxynitride layer confronting said substrate and a silicon nitride layer covering the silicon oxynitride layer.
Claim 3
Dependent Claim
19 words
Mask of claim 1 wherein said silicon oxynitride has a refractive index in the range of 1.65 to 1.90.
Claim 4
Dependent Claim
14 words
Mask of claim 1 wherein said silicon oxynitride has a refractive index of 1.70.
Claim 5
Dependent Claim
110 words
Method of forming dielectric isolation surrounding regions of crystalline silicon comprising the steps of: depositing a layer of silicon oxynitride on surface of said silicon, depositing a layer of silicon nitride on said layer of silicon oxynitride; forming openings in said layers of silicon nitride and silicon oxynitride to said surface at locations where dielectric isolation regions are to be formed; etching a trench in said silicon using said layers as a mask, and oxidizing said silicon in said openings to form a dielectric isolation region of silicon dioxide, wherein the silicon oxynitride layer acts as a barrier to surface oxidation of said silicon under said silicon oxynitride during oxidizing.
Claim 6
Dependent Claim
110 words
Method of forming dielectric isolation surrounding regions of crystalline silicon comprising the steps of: depositing a layer of silicon oxynitride on surface of said silicon, depositing a layer of silicon nitride on said layer of silicon oxynitride; forming openings in said layers of silicon nitride and silicon oxynitride to said surface at locations where dielectric isolation regions are to be formed; etching a trench in said silicon using said layers as a mask, and oxidizing said silicon in said openings to form a dielectric isolation region of silicon dioxide, wherein the silicon oxynitride layer acts as a barrier to surface oxidation of said silicon under said silicon oxynitride during oxidizing.
Claim 7
Dependent Claim
19 words
Method of claim 4 wherein said silicon oxynitride has a refractive index in the range of 1.65 to 1.90.
Claim 8
Dependent Claim
14 words
Method of claim 5 wherein said silicon oxynitride has a refractive index of 1.70.
References Cited (Backward Citations)
No citation records indexed.
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