EP0090111A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device comprising a dielectric isolation region
Assignee: Toshiba Corp
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Filing: 1982-09-23
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Granted: —
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Expires: 2002-09-23
Abstract
Abstract The invention provides a method for manufacturing a semiconductor device, having the steps of: forming a first mask member (13) which has an opening (14) to expose a desired portion of one major surface of a semiconductor substrate (11); doping an impurity which has the same conductivity type as that of the semiconductor substrate through the opening (14) of the first mask member (13) to form an impurity region (15) of a high concentration in the surface layer of the semiconductor substrate (11); forming a second mask member (17) on the side surface of the opening (14) of the first mask member (13) while the first mask member (13) is left as it is; forming a groove (18) by selectively etching the semiconductor substrate (11) using the first and second mask members (13,17), and at the same time leaving an impurity region (19) of the high concentration at least on the side surface of the groove (18); and burying an insulating isolation material (22) in the groove (18).
Inventors
- 👤 Yoshihide Nagakubo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 06:55
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/222; H10D; H10D30/00; H10D30/60; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10P30/22; H10P30/221; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0148; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S148/00; Y10S148/085
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
170 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a first mask member (13) which has an opening (14) to expose a desired portion of one major surface of a semiconductor substrate (11); doping an impurity which has the same conductivity type as a conductivity type of said semiconductor substrate through said opening (14) of said first mask member (13) to form an impurity region (15) of a high concentration in a surface layer of said semiconductor substrate (11); substantially forming a second mask member (17) only on a side surface of said opening (14) of said first mask member (13) while said first mask member (13) is left as it is; forming a groove (18) by selectively etching said semiconductor substrate (11) using said first and second mask members (13, 17), and at the same time leaving an impurity region (19) of the high concentration at least on a side surface of said groove (18); and burying an insulating isolation member (22) in said groove (18).
Claim 2
Independent Claim
170 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a first mask member (13) which has an opening (14) to expose a desired portion of one major surface of a semiconductor substrate (11); doping an impurity which has the same conductivity type as a conductivity type of said semiconductor substrate through said opening (14) of said first mask member (13) to form an impurity region (15) of a high concentration in a surface layer of said semiconductor substrate (11); substantially forming a second mask member (17) only on a side surface of said opening (14) of said first mask member (13) while said first mask member (13) is left as it is; forming a groove (18) by selectively etching said semiconductor substrate (11) using said first and second mask members (13, 17), and at the same time leaving an impurity region (19) of the high concentration at least on a side surface of said groove (18); and burying an insulating isolation member (22) in said groove (18).
Claim 3
Independent Claim
134 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a first mask member (11) which has an opening (14) to expose a desired portion of one major surface of a semiconductor substrate (11); forming a second mask member (17) on a side surface of said opening (14); forming a groove (18) by selectively etching said semiconductor substrate (11) using said first and second mask members (13, 17); removing said second mask member (17); doping an impurity which has the same conductivity type as a conductivity type of said semiconductor substrate (11) through-said opening (14) of said first mask member (13) to form an impurity region (19') of a high concentration at least on a side surface of said groove (18); and burying an insulating isolation material (22) in said groove (18).
Claim 4
Independent Claim
134 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a first mask member (11) which has an opening (14) to expose a desired portion of one major surface of a semiconductor substrate (11); forming a second mask member (17) on a side surface of said opening (14); forming a groove (18) by selectively etching said semiconductor substrate (11) using said first and second mask members (13, 17); removing said second mask member (17); doping an impurity which has the same conductivity type as a conductivity type of said semiconductor substrate (11) through-said opening (14) of said first mask member (13) to form an impurity region (19') of a high concentration at least on a side surface of said groove (18); and burying an insulating isolation material (22) in said groove (18).
Claim 5
Dependent Claim
29 words
A method according to claim 1 or 2, wherein said first mask member (13) comprises a material selected from the group consisting of silicon dioxide, silicon nitride and aluminum.
Claim 6
Dependent Claim
26 words
A method according to claim 1 or 2, wherein said second mask member (17) can be etched using said first mask member (13) as a mask.
References Cited (Backward Citations)
No citation records indexed.
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