EP0100079A2
Expired / Lapsed
EP
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Dry resist development using downstream plasma generation
Assignee: Applied Biosystems Inc
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Filing: 1983-07-22
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Granted: —
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Expires: 2003-07-22
Abstract
Abstract A method for the dry development of photoresist. The photoresist coating of a silicon wafer is developed by the chemical reaction with the active species of a remotely generated plasma.
Inventors
- 👤 Alan R. Reinberg
- 👤 George N. Steinberg
- 👤 Charles B. Zarowin
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 06:18
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/36
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
99 words
A method for the dry development of photoresist, comprising the steps of, introducing a fluorine producing gas and oxygen or oxygen containing gas to a plasma generating region, generating a plasma of the gases in said plasma generating region, transporting said gases to a photoresist developing region remote from said plasma generating region, placing a photoresist coated wafer in said photoresist developing region where said gases chemically remove selected portions of photoresist from said wafer, detecting the end of the chemical reaction of the gases on the photoresist, maintaining the pressure within said developing region within a predetermined range.
Claim 2
Independent Claim
99 words
A method for the dry development of photoresist, comprising the steps of, introducing a fluorine producing gas and oxygen or oxygen containing gas to a plasma generating region, generating a plasma of the gases in said plasma generating region, transporting said gases to a photoresist developing region remote from said plasma generating region, placing a photoresist coated wafer in said photoresist developing region where said gases chemically remove selected portions of photoresist from said wafer, detecting the end of the chemical reaction of the gases on the photoresist, maintaining the pressure within said developing region within a predetermined range.
Claim 3
Dependent Claim
22 words
The method according to claim 1 further comprising the step of, inductively coupling an R.F. power source to said plasma generating region.
Claim 4
Dependent Claim
27 words
The method according to claim 2 wherein the frequency of said inductively coupled R.F. power is in the range 10 KH z to 1 MH . z
Claim 5
Dependent Claim
24 words
The method according to claim 3 wherein the power applied to the plasma generating region is in the range of 100 to 1000 watts.
Claim 6
Dependent Claim
14 words
The method according to claim 4 wherein the fluorine producing gas is carbon tetrafloride.
Claim 7
Dependent Claim
39 words
The method according to claim 5 wherein the flow of carbon tetrafluoride is in the range of 10-500 cubic centimeters per minute and the flow of oxygen is in the range of 100 to 1000 cubic centimeters per minute.
Claim 8
Dependent Claim
18 words
The method according to claim 6 wherein the ratio of oxygen to carbon tetrafluoride flow is approximately 4.5.
Claim 9
Dependent Claim
65 words
The method according to claim 2 further comprising the steps of, maintaining the pressure in the developing region at 0.35 Torr, maintaining the frequency of the RF power at 400 KH , maintaining the power applied to the plasma generating region at 300 watts, flowing oxygen and carbon tetrafluoride at rates of about 155 cubic centimeters per minute and 33 cubic centimeters per minute, respectively.
Claim 10
Dependent Claim
28 words
The method according to claim 1 further comprising the step of; connecting an RF source of power to the plasma generating region by means of a helical resonator.
Claim 11
Dependent Claim
60 words
The method according to claim 9 further comprising the steps of; maintaining the pressure in the developing region at 0.35 Torr, maintaining the frequency of the RF.power at 13.56 MH . maintaining the power applied to the plasma generating region at 300 watts, flowing carbon tetrafluoride and oxygen at rates of about 15 and 155 cubic centimeters per minute, respectively.
References Cited (Backward Citations)
No citation records indexed.
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