EP0100100A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device with an improved bonding section
Assignee: Toshiba Corp
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Filing: 1983-07-27
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Granted: —
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Expires: 2003-07-27
Abstract
Abstract A semiconductor device with a bonding section comprising a semiconductor substrate (11), a silicon layer (23) formed on the semiconductor substrate with a first insulating layer (20) interposed therebetween, and a bonding pad (25) formed on the silicon layer with a second insulating layer (24) interposed therebetween. The silicon layer is substantially the same size as the bonding pad. When a lead line (26) is bonded to the bonding pad, the silicon layer lessens the stress caused by the bonding.
Inventors
- 👤 Masahiro Abe
- 👤 Masaharu Aoyama
- 👤 Takashi Ajima
- 👤 Toshio Yonezawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 11:31
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W72/00; H10W72/071; H10W72/075; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/59; H10W72/90; H10W72/931; H10W72/934; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
88 words
A semiconductor device with a bonding section comprising: a semiconductor substrate (11); an insulating layer (20, 24) formed on said semiconductor substrate; and a bonding pad (25) formed on said insulating layer, characterized in that a polycrystalline silicon layer or an amorphous silicon layer (23) with a size substantially equal to that of said bonding pad is formed in said insulating layer under said bonding pad, and when a lead wire (26) is connected to said bonding pad, said silicon layer lessens a stress caused by the bonding.
Claim 2
Dependent Claim
88 words
A semiconductor device with a bonding section comprising: a semiconductor substrate (11); an insulating layer (20, 24) formed on said semiconductor substrate; and a bonding pad (25) formed on said insulating layer, characterized in that a polycrystalline silicon layer or an amorphous silicon layer (23) with a size substantially equal to that of said bonding pad is formed in said insulating layer under said bonding pad, and when a lead wire (26) is connected to said bonding pad, said silicon layer lessens a stress caused by the bonding.
Claim 3
Dependent Claim
40 words
A semiconductor device with a bonding section according to claim 1, characterized in that said bonding pad (25) is made of aluminum containing at least silicon and is directly formed on said polycrystalline silicon layer or amorphous silicon layer (23).
Claim 4
Dependent Claim
34 words
A semiconductor device with a bonding section according to claim 1 or 2, characterized in that a semiconductor element (22) is formed in said semiconductor substrate under said polycrystalline silicon layer or amorphous layer.
Claim 5
Dependent Claim
31 words
A semiconductor device with a bonding section according to claim 3, characterized by further comprising a conductive layer (31) formed in said insulating layer (30, 32) under said silicon layer (23).
References Cited (Backward Citations)
No citation records indexed.
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