EP0100454A1
Expired / Lapsed
EP
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Semiconductor device having a conductive layer consisting of a high-melting point metal silicide and a method for manufacturing such a semiconductor device
Assignee: Toshiba Corp
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Filing: 1983-07-05
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Granted: —
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Expires: 2003-07-05
Abstract
Abstract There is proposed a semiconductive device comprising a conductive layer (4) consisting of a high-melting point metal silicide having a formula MSi x (wherein M is a high-melting point metal and x is a value falling within 2.0 < x ≦ 4.0). Said conductive layer (4) has a sheet resistance of not more than 5 Ω/□. A method for manufacturing said semiconductor device is also proposed. Said method comprises the step of depositing on a semiconductor substrate (1) through an insulating film (2) a metal silicide film (4) having the formula MSi x , and annealing the metal silicide film (4).
Inventors
- 👤 Katsuya Okumura
- 👤 Tatsuzo Kawaguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 13:32
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/667; H10D64/668; H10D30/00; H10D30/60; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
52 words
A semiconductor device which comprises a conductive layer consisting of a high-melting point metal silicide having a formula MSi x (where M is a high-melting point metal and x is a value within the range of 2.0 < x < 4.0), and having a sheet resistance of not more than 5 Ω/□.
Claim 2
Dependent Claim
52 words
A semiconductor device which comprises a conductive layer consisting of a high-melting point metal silicide having a formula MSi x (where M is a high-melting point metal and x is a value within the range of 2.0 < x < 4.0), and having a sheet resistance of not more than 5 Ω/□.
Claim 3
Dependent Claim
19 words
A semiconductor device according to claim 1, characterized in that the high-melting point metal silicide film comprises molybdenum silicide.
Claim 4
Dependent Claim
19 words
A semiconductor device according to claim 1, characterized in that the high-melting point metal silicide film comprises tungsten silicide.
Claim 5
Dependent Claim
19 words
A semiconductor device according to claim 1, characterized in that the high-melting point metal silicide film comprises tantalum silicide.
Claim 6
Dependent Claim
19 words
A semiconductor device according to claim 1, characterized in that the high-melting point metal silicide film comprises titanium silicide.
Claim 7
Dependent Claim
36 words
A semiconductor device according to claim 1, characterized in that the high-melting point metal silicide film comprises at least two members selected from the group consisting of molybdenum silicide, tungsten silicide, titanium silicide and tantalum silicide.
Claim 8
Dependent Claim
23 words
A semiconductor device according to claim 1, characterized in that the conductive layer is used as a gate electrode of a field-effect transistor.
Claim 9
Dependent Claim
19 words
A semiconductor device according to claim 1, characterized in that the conductive layer is used as a capacitor electrode.
Claim 10
Dependent Claim
19 words
A semiconductor device according to claim 1, characterized in that the conductive layer is used as a wiring electrode.
Claim 11
Independent Claim
66 words
A method for manufacturing a semiconductor device, comprising the steps of depositing a high-melting point metal silicide film on a semiconductor substrate through an insulating film, the high-melting point metal silicide film having a formula MSi x (where M is a high-melting point metal and x is a value within a range of 2 < x ≦ 4.0); and annealing the high-melting point metal silicide film.
Claim 12
Independent Claim
66 words
A method for manufacturing a semiconductor device, comprising the steps of depositing a high-melting point metal silicide film on a semiconductor substrate through an insulating film, the high-melting point metal silicide film having a formula MSi x (where M is a high-melting point metal and x is a value within a range of 2 < x ≦ 4.0); and annealing the high-melting point metal silicide film.
References Cited (Backward Citations)
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