Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
204 words
A logical circuit having a first circuit consisting of at least one first conductivity-type MOSFET (14, 23, 33, 43) whose gate is connected to an input terminal, and having a second circuit consisting of at least one second conductivity-type MOSFET (15, 24, 34, 44) whose gate is connected to said input terminal, said first and second circuits being connected at one end to an output terminal and at the other end to a first power source and a second power source, respectively; said logical circuit being characterized by comprising: a depletion-type MOSFET (13, 21, 31, 41) of the second conductivity type, which has a threshold voltage, the absolute value of which is larger than that of said first conductivity-type MOSFET, which MOSFET is interposed between the other end of said first circuit and said first power source, and whose gate is connected to said output terminal; and a depletion-type MOSFET (16, 22, 32, 42) of the first conductivity type, which has a threshold voltage the absolute value of which is larger than that of said second conductivity-type MOSFET, which MOSFET is interposed between the other end of said second circuit and said second power source, and whose gate is connected to said output terminal.
Claim 2
Dependent Claim
204 words
A logical circuit having a first circuit consisting of at least one first conductivity-type MOSFET (14, 23, 33, 43) whose gate is connected to an input terminal, and having a second circuit consisting of at least one second conductivity-type MOSFET (15, 24, 34, 44) whose gate is connected to said input terminal, said first and second circuits being connected at one end to an output terminal and at the other end to a first power source and a second power source, respectively; said logical circuit being characterized by comprising: a depletion-type MOSFET (13, 21, 31, 41) of the second conductivity type, which has a threshold voltage, the absolute value of which is larger than that of said first conductivity-type MOSFET, which MOSFET is interposed between the other end of said first circuit and said first power source, and whose gate is connected to said output terminal; and a depletion-type MOSFET (16, 22, 32, 42) of the first conductivity type, which has a threshold voltage the absolute value of which is larger than that of said second conductivity-type MOSFET, which MOSFET is interposed between the other end of said second circuit and said second power source, and whose gate is connected to said output terminal.
Claim 3
Dependent Claim
23 words
A logical circuit according to claim 1, characterized in that said MOSFETs whose gates are connected to said input terminal are enhancement-type MOSFETs.
Claim 4
Dependent Claim
23 words
A logical circuit according to claim 1, characterized in that said MOSFETs whose gates are connected to said input terminal are depletion-type MOSFETs.
Claim 5
Dependent Claim
19 words
A logical circuit according to claim 1, characterized in that said first and second circuits form a complementary-type inverter.
Claim 6
Dependent Claim
21 words
A logical circuit according to claim 1, charac- teirzed in that said first and second circuits form a complementary-type NOR circuit.
Claim 7
Dependent Claim
20 words
A logical circuit according to claim 1, characterized in that said first and second circuits form a complementary-type NAND circuit.
Claim 8
Dependent Claim
28 words
A logical circuit according to claim 1, characterized by further comprising a crystal oscillator including a crystal oscillating element (45) interposed between said input and said output terminals.
Claim 9
Dependent Claim
53 words
A logical circuit according to claim 4, characterized in that two sets of inverters (20, 30) are reversely connected in parallel, and each output is connected to a digit line through a transfer gate (25, 35) whose switching is controlled in accordance with a signal on a word line, thereby constituting a memory.