EP0107325A2
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EP
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Method of making oxide films
Assignee: Trasformazione Societaria at & T Technologies Inc
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Filing: 1983-09-15
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Granted: —
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Expires: 2003-09-15
Abstract
Abstract Oxide (R m 0 n ) films are grown by evaporation from separate sources of element (R) and an oxide (M r O s ) which serves as the oxygen source. The oxide (M r O s ) should sublimate congruently; i.e., without decomposing into oxygen and its constituent element (M). On the growth surface this oxide (M r O s ) can react with the element (R) to form another oxide (R m O n ) that is thermodynamically more stable: Using this technique, films of Al z O 3 , MgO, Si0 2 and MgAl 2 O 4 have been grown using As 2 0 3 or Sb 2 0 3 as the oxygen source.
Inventors
- 👤 Richard Alan Stall
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 06:27
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10P14/66; H10P14/668; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69397
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
88 words
A method of fabricating an oxide film R m O n , where R is at least one metal or at least one semiconductor, or combination thereof, and m and n are integers, characterised by a) mounting a substrate in a chamber, b) providing in the chamber a solid oxygen source, which does not contain R, c) providing a source of R in the chamber, and d) heating the sources to evaporation, the evaporants reacting to form the oxide film R m O n on the substrate. m
Claim 2
Independent Claim
88 words
A method of fabricating an oxide film R m O n , where R is at least one metal or at least one semiconductor, or combination thereof, and m and n are integers, characterised by a) mounting a substrate in a chamber, b) providing in the chamber a solid oxygen source, which does not contain R, c) providing a source of R in the chamber, and d) heating the sources to evaporation, the evaporants reacting to form the oxide film R m O n on the substrate. m
Claim 3
Dependent Claim
57 words
A method according to claim 1, characterised in that the solid oxygen source comprises an oxide M r O s , which is less thermodynamically stable than the oxide R m O n , where M is at least one metal or at least one m semiconductor, or combination thereof, and where r and s are integers.
Claim 4
Dependent Claim
17 words
A method according to claim 2, characterised in that the oxide M r O s sublimates congruently.
Claim 5
Dependent Claim
20 words
4 . A method according to claim 3, characterised in that the reaction takes place on the substrate as follows:
Claim 6
Dependent Claim
26 words
A method according to claim 4, characterised in that the temperature of the substrate is high enough to desorb the oxide M r O s-n .
Claim 7
Independent Claim
40 words
A method according to claims 1, 2,3,4, or 5, characterised in that the oxide R m O n is selected from Al 2 O 3 , M g O, SiO 2 , and M g A1 2 0 4 .
Claim 8
Dependent Claim
20 words
A method according to claim 6, characterised in that the temperature of the substrate is substantially between 350°C and 750°C.
Claim 9
Independent Claim
23 words
A method according to claims I or 2, characterised by, prior to heating, lowering the pressure of the chamber to a subatmospheric pressure.
Claim 10
Independent Claim
21 words
A method according to claims 1, 2, 3, 4, or 5, characterised in that the oxygen source comprises a binary oxide.
Claim 11
Dependent Claim
25 words
A method according to claim 9, characterised in that the binary oxide is selected from As 2 0 3 and Sb 2 O 3 .
References Cited (Backward Citations)
No citation records indexed.
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