EP0107510A2
Expired / Lapsed
EP
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Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus
Assignee: Energy Conversion Devices Inc
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Filing: 1983-10-26
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Granted: —
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Expires: 2003-10-26
Abstract
Abstract A system (70) for introducing, confining and evacuating process gases adjacent the cathode region of glow discharge deposition apparatus is disclosed, the apparatus being adapted to deposit at least one layer of semiconductor material onto a substrate (11). The deposition apparatus includes at least one dedicated deposition chamber (28) into which process gases are introduced for glow discharge disassociation into species. The system (70) includes a baffling manifold (52) adjacent the cathode (34), said manifold (52) adapted to substantially reduce areas of localized rarification and compression of process gases flowing through the plasma region for substantially preventing adjacent stagnant and rapidly moving areas of process gases from forming non-uniform flow patterns as the semiconductor layer is deposited on the surface of the substrate (11). The system (70) is also adapted to expose the entire transverse width of the substrate (11) for the deposition of semiconductor material thereunto.
Inventors
- 👤 Prem Nath
- 👤 Kevin Richard Hoffman
- 👤 Timothy Dean Laarman
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 19:11
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45502; C23C16/45506; C23C16/45563; C23C16/45578; C23C16/45587; C23C16/45591; C23C16/50; C23C16/505; C23C16/509; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
116 words
An isolated glow discharge deposition chamber adapted for the deposition of semiconductor layers onto a substrate, the chamber including: a substrate; a cathode spaced from the substrate; means for introducing process gases into the region of the deposition chamber between the cathode and substrate, said introducing means being capable of establishing a turbulent flow of process gases across the layered surface of the substrate; and means for energizing the cathode to disassociate the process gases into plasma; characterized by means (70) adapted to sufficiently reduce areas of localized rarification and compression of process gases flowing across the layered surface of the substrate (11) to substantially prevent the formation of process gas flow patterns on the substrate.
Claim 2
Dependent Claim
116 words
An isolated glow discharge deposition chamber adapted for the deposition of semiconductor layers onto a substrate, the chamber including: a substrate; a cathode spaced from the substrate; means for introducing process gases into the region of the deposition chamber between the cathode and substrate, said introducing means being capable of establishing a turbulent flow of process gases across the layered surface of the substrate; and means for energizing the cathode to disassociate the process gases into plasma; characterized by means (70) adapted to sufficiently reduce areas of localized rarification and compression of process gases flowing across the layered surface of the substrate (11) to substantially prevent the formation of process gas flow patterns on the substrate.
Claim 3
Dependent Claim
35 words
A chamber according to claim 1, wherein the reduction means comprises a baffled manifold (52) including staggered baffle plates (54a-54c) about which the process gases are directed prior to contacting the layered substrate (11) surface.
Claim 4
Dependent Claim
27 words
A chamber according to claim 2, wherein the process gas introduction means comprises an apertured conduit (36) housed within a chamber (56a) of the baffled manifold (52).
Claim 5
Dependent Claim
163 words
An isolated glow discharge deposition chamber adapted for the deposition of semiconductor layers onto a relatively large area substrate, the chamber including: at least one cathode; a substrate spacedly removed from the cathode; a cathode region defined above, below and to the sides of the cathode; means for introducing process gases into the deposition chamber; shield means at least partially surrounding the cathode region for inhibiting the free flow of process gases from the cathode region; means for energizing the at least one cathode to disassociate the process gases into plasma; and means for withdrawing unused process gases and nondeposited plasma; characterized in that said shield means including opposed flanges (52a-6"4a), the distance between said flanges being greater than the width of the substrate (11), whereby the substrate travels through the cathode region of the deposition chamber (28) beneath said flanges of said shield means so that the entire transverse width of the substrate is exposed for the deposition of semiconductor material thereunto.
Claim 6
Dependent Claim
163 words
An isolated glow discharge deposition chamber adapted for the deposition of semiconductor layers onto a relatively large area substrate, the chamber including: at least one cathode; a substrate spacedly removed from the cathode; a cathode region defined above, below and to the sides of the cathode; means for introducing process gases into the deposition chamber; shield means at least partially surrounding the cathode region for inhibiting the free flow of process gases from the cathode region; means for energizing the at least one cathode to disassociate the process gases into plasma; and means for withdrawing unused process gases and nondeposited plasma; characterized in that said shield means including opposed flanges (52a-6"4a), the distance between said flanges being greater than the width of the substrate (11), whereby the substrate travels through the cathode region of the deposition chamber (28) beneath said flanges of said shield means so that the entire transverse width of the substrate is exposed for the deposition of semiconductor material thereunto.
Claim 7
Dependent Claim
31 words
A chamber according to claim 4, wherein the flanges (52a-64a) lie in a plane above and substantially parallel to the plane of the substrate (11) passing through the deposition chamber (28).
Claim 8
Dependent Claim
25 words
A chamber according to claim 5, wherein the deposition chamber (28) further includes attractive means (50) adapted to urge the substrate toward the flanges (52a-64a).
Claim 9
Dependent Claim
22 words
A chamber according to claim 6, wherein the attractive means are a plurality of spaced magnets (50) supported by the flanges (52a-64a).
References Cited (Backward Citations)
No citation records indexed.
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