EP0128615A1
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Charge-coupled semiconductor device and image sensor device of high information density
Assignee: Koninklijke Philips NV
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Filing: 1984-05-29
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Granted: —
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Expires: 2004-05-29
Abstract
Abstract In a CCD, especially in an image sensing device (1), the electrodes of the sensor part (2) and the memory part (3) can be switched between a reference level and a clock pulse. As a result, the information density and hence in the image sensor device the number of image lines to be read out independently can be double. Thus, the resolution is improved, while moreover the possibility is obtained (for example, for an electronic photocamera) to record even and odd lines simultaneously.
Inventors
- 👤 Arnoldus Johannes Juliana Boudewijns
- 👤 Marnix Guillaume Collet
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 18:11
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H04; H04N; H04N25/00; H04N25/70; H04N25/71; H04N25/72; H04N25/745
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
91 words
A charge-coupled semiconductor device comprising a semiconductor body in which at a major surface at least one charge transport channel is defined and which is provided at the same major surface with a system of electrodes at which a reference signal can be supplied for charge storage and a clock signal can be supplied for charge transport, characterized in that the semiconductor body is provided with switching elements by means of which either the reference signal or the clock signal can be supplied at separate groups of at least one electrode.
Claim 2
Dependent Claim
91 words
A charge-coupled semiconductor device comprising a semiconductor body in which at a major surface at least one charge transport channel is defined and which is provided at the same major surface with a system of electrodes at which a reference signal can be supplied for charge storage and a clock signal can be supplied for charge transport, characterized in that the semiconductor body is provided with switching elements by means of which either the reference signal or the clock signal can be supplied at separate groups of at least one electrode.
Claim 3
Dependent Claim
117 words
A charge-coupled image sensing device for collecting a radiation image and for converting it into an electric signal, comprising a semiconductor boy in which at a major surface several charge transport channels are defined for charge transport from a radiation-sensitive part to an output circuit or a processing unit, the semiconductor body being provided at the same major surface with a system of electrodes at which a reference signal can be supplied for charge storage and a clock signal can be supplied for charge transport, characterized in that the semiconductor body is provided with switching elements by which either the reference signal or the clock signal can be supplied at separate groups of at least one electrode.
Claim 4
Dependent Claim
117 words
A charge-coupled image sensing device for collecting a radiation image and for converting it into an electric signal, comprising a semiconductor boy in which at a major surface several charge transport channels are defined for charge transport from a radiation-sensitive part to an output circuit or a processing unit, the semiconductor body being provided at the same major surface with a system of electrodes at which a reference signal can be supplied for charge storage and a clock signal can be supplied for charge transport, characterized in that the semiconductor body is provided with switching elements by which either the reference signal or the clock signal can be supplied at separate groups of at least one electrode.
Claim 5
Dependent Claim
118 words
A charge-coupled image sensing device for collecting a radiation image and converting it into an electric signal comprising a semiconductor body in which at a major surface are defined a number of mutually separated charge transport channels for charge transport from a radiation-sensitive part to a memory part, the semiconductor body being provided at the same major surface with a system of electrodes at which a reference signal can be supplied for charge storage and a clock signal can be supplied for charge transport, characterized in that the semiconductor body is provided with switching elements by means of which either the reference signal or the clock signal can be supplied at separate groups of at least one electrode.
Claim 6
Dependent Claim
118 words
A charge-coupled image sensing device for collecting a radiation image and converting it into an electric signal comprising a semiconductor body in which at a major surface are defined a number of mutually separated charge transport channels for charge transport from a radiation-sensitive part to a memory part, the semiconductor body being provided at the same major surface with a system of electrodes at which a reference signal can be supplied for charge storage and a clock signal can be supplied for charge transport, characterized in that the semiconductor body is provided with switching elements by means of which either the reference signal or the clock signal can be supplied at separate groups of at least one electrode.
Claim 7
Dependent Claim
72 words
A charg-coupled semiconductor device as claimed in any one of the preceding Claims, characterized in that the reference signal produces under at least a part of the electrodes a potential.variation of potential barriers and potential wells repeated per n electrodes, n ≥ 1 and the clock signal produces under at least a part of the electrodes a potential variation of potential barriers and potential wells repeated per m electrodes, m > n.
Claim 8
Independent Claim
21 words
A device as claimed in any one of the preceding Claims, characterized in that a switching element comprises a MOS transistor.
Claim 9
Independent Claim
22 words
A device as claimed in any one of Claims 1 to 5, characterized in that the switching elements are controlled from registers.
Claim 10
Independent Claim
20 words
A device as claimed in any one of Claims 1 to 6, characterized in that the reference signal is variable.
Claim 11
Dependent Claim
30 words
An image sensing device as claimed in Claim 2 or 3, for two-phase transport, characterized in that the image sensor device has at least one reading-out register of double construction.
Claim 12
Dependent Claim
34 words
An image sensing device as claimed in any one of Claims 2 to 8, characterized in that the elements for controlling the switching elements, reading and amplifying are formed in the same semiconductor body.
Claim 13
Dependent Claim
41 words
10, An image sensing device as claimed in any one of Claims 3 to 9 , characterized in that for 1:n interlacing the radiation-sensitive part has a number of electrodes n/2 times the number of transport electrodes of the memory part.
References Cited (Backward Citations)
US3909803A
Cited
US4178614A
Cited
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