EP0141417A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Apparatus for forming film by ion beam
Assignee: Hitachi Ltd
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Filing: 1984-11-06
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Granted: —
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Expires: 2004-11-06
Abstract
Abstract An ion beam apparatus comprises a chamber of high vacuum, a heated crucible (4) for producing vapor of a material (3), ionizing means (46, 47, 49), ion accelerating means (6b, 5). A substrate (5) to be coated with the vaporized material is disposed within the chamber. An accelerating voltage (-V,, 57) is applied across the crucible (4) and the accelerating means (6b, 5) such that the crucible (4) is of positive polarity while the accelerating means is of negative polarity. The crucible is provided with a small hole (7b) for ejecting the vapor of the material into the vacuum chamber to thereby form atom clouds referred to as clusters under adiabatic expansion and supercooling, a part of the clusters being ionized through irradiation of electrons by the ionizing means and accelerated by the accelerating means so that the ionized and accelerated clusters deposit on the substrate (5) to form a thin film (23) thereon. An electrostatic optical system (13,36,43) is interposed between the cluster ionizing region (49) and the substrate (5) wherein the electrostatic optical system serves to focus the ionized clusters onto the element to form the thin film (23) thereon through deposition of the ionized clusters.
Inventors
- 👤 Tateoki Miyauchi
- 👤 Hiroshi Yamaguchi
- 👤 Mikio Hongo
- 👤 Katsuro Mizukoshi
- 👤 Akira Shimase
- 👤 Ryohei Satoh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 05:39
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/48; H; H01; H01J; H01J37/00; H01J37/30; H01J37/305; H01J37/3053; H01J37/3056; C23C14/221; H01J37/317; H01J37/3178; H01J2237/00; H01J2237/30; H01J2237/317; H01J2237/31749
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
281 words
An ion beam apparatus, comprising an enclosure (2) defining a chamber of high vacuum, said chamber accommodating therein a furnace (4) for producing vapor of a material (3) contained therein, ionizing means (46, 47), ion accelerating means (6b, 5; V 1 , 57), and an element (5) to be deposited with said vaporized material to thereby form a film (23) thereon, wherein an accelerating voltage t-V 1 , 57) is applied across said furnace (4) and said accelerating means (6b) such that said furnace (4) is of positive polarity while said accelerating means (6b, 5) is of negative polarity, said material (3) contained in said vapor generating furnace (4) being vaporized under heating, a pressure difference being maintained between the vapor pressure within said furnace (4) and said vacuum chamber (2), said furnace being provided with a small hole (7b) for ejecting the vapor of said material into said vacuum chamber to thereby form atom clouds referred to as clusters (8b) under adiabatic expansion and supercooling, a part of said clusters being ionized through irradiation of electron beam by said ionizing means (46, 47) and accelerated by said accelerating means (6b, 5; 57) so that said ionized and accelerated clusters deposit on said element (5) to form a thin film, said apparatus further comprising electrostatic optical system (13) interposed between the cluster ionizing region (49) and said element (5) to be deposited with said ionized clusters, wherein said electrostatic optical system (13) serves to change a path to be followed by said ionized clusters (8b) to thereby focus said ionized clusters onto said element (5) to form the thin film on said element (5) through deposition of said ionized clusters (8b).
Claim 2
Dependent Claim
281 words
An ion beam apparatus, comprising an enclosure (2) defining a chamber of high vacuum, said chamber accommodating therein a furnace (4) for producing vapor of a material (3) contained therein, ionizing means (46, 47), ion accelerating means (6b, 5; V 1 , 57), and an element (5) to be deposited with said vaporized material to thereby form a film (23) thereon, wherein an accelerating voltage t-V 1 , 57) is applied across said furnace (4) and said accelerating means (6b) such that said furnace (4) is of positive polarity while said accelerating means (6b, 5) is of negative polarity, said material (3) contained in said vapor generating furnace (4) being vaporized under heating, a pressure difference being maintained between the vapor pressure within said furnace (4) and said vacuum chamber (2), said furnace being provided with a small hole (7b) for ejecting the vapor of said material into said vacuum chamber to thereby form atom clouds referred to as clusters (8b) under adiabatic expansion and supercooling, a part of said clusters being ionized through irradiation of electron beam by said ionizing means (46, 47) and accelerated by said accelerating means (6b, 5; 57) so that said ionized and accelerated clusters deposit on said element (5) to form a thin film, said apparatus further comprising electrostatic optical system (13) interposed between the cluster ionizing region (49) and said element (5) to be deposited with said ionized clusters, wherein said electrostatic optical system (13) serves to change a path to be followed by said ionized clusters (8b) to thereby focus said ionized clusters onto said element (5) to form the thin film on said element (5) through deposition of said ionized clusters (8b).
Claim 3
Dependent Claim
37 words
An ion beam apparatus according to claim 1, further including deflecting electrode means (14, 24) for separating said ionized clusters from neutral clusters so that said ionized clusters are focussed onto said element (5) to be deposited.
Claim 4
Dependent Claim
50 words
An ion beam apparatus according to claim 1 or 2, further including a spatial filter (42; 50) having an opening (41) at a location substantially coinciding with the focussed portion of said ionized clusters (8b), to allow the ionized clusters to be extracted selectively for deposition on said element (5).
Claim 5
Dependent Claim
49 words
An ion beam apparatus according to claim 1, further including a partition plate (50) disposed between said element (5) to be deposited with the vaporized material and said vacuum chamber, said partition plate having a small hole (41) formed therein for allowing the focussed clusters (8b) to pass therethrough.
Claim 6
Dependent Claim
27 words
An ion beam apparatus according to claim 1 or 4, further including heating means (7) for heating said element (5) to be deposited with the vaporized material.
Claim 7
Dependent Claim
38 words
An ion beam apparatus according to claim 4, further including vapor deposition enhancing/improving means (53; 55; 56) provided in association with a deposition chamber (52) defined by said partition plate (50) in which said element (5) is disposed.
Claim 8
Dependent Claim
32 words
An ion beam apparatus according to claim 6, wherein said vapor deposition enhancing/improving means includes evacuating means (53, 54) connected to said deposition chamber (52) for producing vacuum in said deposition chamber.
Claim 9
Dependent Claim
30 words
An ion beam apparatus according to claim 6 or 7, wherein said vapor deposition enhancing/improving means includes cooling means (55) disposed within said deposition chamber (52) for circulating a coolant.
Claim 10
Dependent Claim
41 words
An ion beam apparatus according to claim 5 or 7 or 8, wherein said vapor deposition enhancing/improving means includes reaction gas introducing means (56) for bringing a reaction gas in contact with said element to be deposited with the vaporized material.
Claim 11
Dependent Claim
36 words
A film forming method including the steps of: (a) focussing an ionized cluster ion beam by an electrostatic optical system, and (b) guiding and depositing said ionized cluster ion beam on an element to be deposited.
Claim 12
Dependent Claim
36 words
A film forming method including the steps of: (a) focussing an ionized cluster ion beam by an electrostatic optical system, and (b) guiding and depositing said ionized cluster ion beam on an element to be deposited.
Claim 13
Dependent Claim
19 words
A film forming method according to claim 9, further comprising a step for deflecting said ionized cluster ion beam.
References Cited (Backward Citations)
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