EP0146895A2
Expired / Lapsed
EP
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Method of manufacturing semiconductor device
Assignee: Toshiba Corp
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Filing: 1984-12-14
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Granted: —
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Expires: 2004-12-14
Abstract
Abstract @ A method of manufacturing a semiconductor device in which a micro-patterned field oxide film can be formed includes the steps of: sequentially forming an oxidation-resistive film and an oxidizable film on a semiconductor substrate; forming a window in a predetermined region of said oxidizable film, in which said oxidation-resistive film is exposed; performing thermal oxidation to said oxidizable film so as to convert it into an insulating film and for narrowing a width of said window by volume expansion due to conversion; forming a field oxide film in a region of said semiconductor substrate defined by said window of said insulating film; and forming a semiconductor element in the region of said semiconductor substrate isolated by said field oxide film.
Inventors
- 👤 Takayoshi C/O Patent Division Higuchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 07:15
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/10; H10W10/17; H10P; H10P76/00; H10P76/40; H10P76/405; H10P76/408; H10P76/4085; H10P76/4088; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/0126; H10W10/014; H10W10/0148; H10W10/13
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
117 words
A method of manufacturing a semiconductor device, comprising the steps of: (a) sequentially forming an oxidation-resistive film and an oxidizable film on a semiconductor substrate; (b) forming a window in a predetermined region of said oxidizable film, in which said oxidation-resistive film is exposed; (c) performing thermal oxidation to said oxidizable film so as to convert said oxidizable film into an insulating film and for narrowing a width of said window by volume expansion due to conversion; (d) forming a field oxide film in a region of said semiconductor substrate defined by said window of said insulating film; and (e) forming a semiconductor element in the region of said semiconductor substrate isolated by said field oxide film.
Claim 2
Independent Claim
117 words
A method of manufacturing a semiconductor device, comprising the steps of: (a) sequentially forming an oxidation-resistive film and an oxidizable film on a semiconductor substrate; (b) forming a window in a predetermined region of said oxidizable film, in which said oxidation-resistive film is exposed; (c) performing thermal oxidation to said oxidizable film so as to convert said oxidizable film into an insulating film and for narrowing a width of said window by volume expansion due to conversion; (d) forming a field oxide film in a region of said semiconductor substrate defined by said window of said insulating film; and (e) forming a semiconductor element in the region of said semiconductor substrate isolated by said field oxide film.
Claim 3
Dependent Claim
28 words
A method according to claim 1, characterized in that in said step (a), a thermal oxide film is formed on said semiconductor substrate before forming said oxidation-resistive film.
Claim 4
Dependent Claim
53 words
A method according to claim 1, characterized in that said step (d) of forming said field oxide film comprises the steps of selectively removing said oxidation-resistive film using said insulating film as a mask, removing said insulating film, and performing thermal oxidation using said oxidation-resistive film which is selectively removed as a mask.
Claim 5
Dependent Claim
40 words
A method according to claim 2, further comprising the step of forming another oxidizable film between said semiconductor substrate and said oxidation-resistive film, a part of said another oxidizable film being converted into an oxide film by the thermal oxidation.
Claim 6
Dependent Claim
42 words
A method according to claim 3, further comprising the step of introducing an impurity of the same conductivity type as that of said semiconductor substrate into said semiconductor substrate using said oxidation-resistive film as a mask, after selectively removing said oxidation-resistive film.
Claim 7
Dependent Claim
62 words
A method according to claim 1, characterized in that said step (d) of forming said field oxide film comprises the steps of forming a groove in said semiconductor substrate by selectively removing said oxidation-resistive film and said semiconductor substrate using said insulating film as a mask, removing said insulating film and said oxidation-resistive film, and burying the groove with an oxide film.
Claim 8
Dependent Claim
72 words
A method according to claim 6, characterized in that said step of burying the groove with the oxide film is performed in such a manner that an oxide film is deposited on an overall surface of said semiconductor substrate including the groove, another groove in the oxide film which is formed corresponding to the groove of said substrate is buried with a resist film and an overall surface is subjected to etching.
Claim 9
Dependent Claim
34 words
A method according to claim 6, characterized in that another thermal oxide film is formed on an overall surface of said semiconductor substrate including the groove before burying the groove with the oxide film.
Claim 10
Dependent Claim
40 words
A method according to claim 6, further comprising the step of introducing an impurity of the same conductivity type as that of said semiconductor substrate into said semiconductor substrate using said oxidizable film as a mask after said step (b).
Claim 11
Dependent Claim
17 words
A method according to claim 1, characterized in that said oxidation-resistive film is formed of silicon nitride.
Claim 12
Dependent Claim
29 words
A method according to claim 1, characterized in that said oxidizable film is formed of a material selected from the group consisting of polycrystalline silicon and a metal silicide.
References Cited (Backward Citations)
No citation records indexed.
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