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EP0155152A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

A semiconductor laser

Assignee: Mitsubishi Electric Corp
•
Filing: 1985-03-08
•
Granted: —
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Expires: 2005-03-08
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Abstract

Abstract A semiconductor laser, which comprises: a first cladding layer (2) of first conductivity type provided on a semiconductor substrate (1) of first conductivity type; a current blocking layer (3) second conductivity type provided on the cladding layer having a stripe groove (10) from which the first cladding layer (2) is exposed at the bottom thereof; a light guide layer (4) of first conductivity type provided covering the current blocking layer (3), the stripe groove (10), and the first cladding layer (2) exposed from the groove; an active layer (51 provided on the light guide layer (4) curved in the neighbourhood of the stripe groove (10), whose refractive index is larger than that of the light guide layer (4); and a second cladding layer (6) of second conductivity type provided on the active layer (5), whose refractive index is smaller than that of the active layer (5).

Inventors

  • 👤 Yutaka Mihashi
  • 👤 Yutaka Nagai

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-03 14:48
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/2237

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 149 words
A semiconductor laser, which is characterised by: a first cladding layer (2) of first conductivity type provided on a semiconductor substrate (1) of first conductivity type; a current blocking layer (3) of second conductivity type provided on the first cladding layer (2) having a stripe groove (10) from which the first cladding layer (2) is exposed at the bottom thereof; a light guide layer (4) of first conductivity type provided covering the current blocking layer (3), the stripe groove (10), and the first cladding layer (2) exposed from the groove; an active layer (5) provided on the light guide layer (4) curved in the neighbourhood of the stripe groove, whose refractive index is larger than that of the light guide layer (.4); and a second cladding layer (6) of second conductivity type provided on the active layer (5), whose refractive index is smaller than that of the active layer.
Claim 2
Dependent Claim 149 words
A semiconductor laser, which is characterised by: a first cladding layer (2) of first conductivity type provided on a semiconductor substrate (1) of first conductivity type; a current blocking layer (3) of second conductivity type provided on the first cladding layer (2) having a stripe groove (10) from which the first cladding layer (2) is exposed at the bottom thereof; a light guide layer (4) of first conductivity type provided covering the current blocking layer (3), the stripe groove (10), and the first cladding layer (2) exposed from the groove; an active layer (5) provided on the light guide layer (4) curved in the neighbourhood of the stripe groove, whose refractive index is larger than that of the light guide layer (.4); and a second cladding layer (6) of second conductivity type provided on the active layer (5), whose refractive index is smaller than that of the active layer.
Claim 3
Dependent Claim 37 words
A semiconductor laser as defined in claim 1, wherein the refractive index of the light guide layer (4) is larger than that of the first cladding layer (2) and smaller than that of the active layer (5).

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