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Process for forming a top surface metallurgy pattern on a ceramic substrate

Assignee: International Business Machines Corp
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Filing: 1985-05-07
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Granted: —
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Expires: 2005-05-07
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Abstract

Abstract A process for forming a top surface metallurgy pattern on a green unsintered ceramic substrate (30) including the steps of forming indented lines (40) on the surface of the substrate, sintering the substrate, depositing a blanket layer (42) over the top surface of the substrate with a thickness less than the depth of the indented lines, applying a masking layer (46) over the metal layer, removing the masking layer over all portions except the indented lines, removing the exposed areas of the metal layer, and removing the remaining portions of the masking layer.

Inventors

  • 👤 Albert Amendola
  • 👤 Arnold Friedrich Schmeckenbecher
  • 👤 Joseph Thomas Sobon

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-31 18:57
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/01; H10W70/05; H05; H05K; H05K3/00; H05K3/02; H05K3/06; H05K3/061; H05K3/10; H05K3/107; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K1/09; H05K1/092; H05K1/11; H05K1/111; H05K1/112; H05K1/113; H05K2201/00; H05K2201/03; H05K2201/0302; H05K2201/0317; H05K2201/09; H05K2201/09009; H05K2201/09036; H05K2203/00; H05K2203/01; H05K2203/0104; H05K2203/0108; H05K2203/02; H05K2203/025; H05K2203/07; H05K2203/0756; H05K2203/0759; H05K2203/0769; H05K3/14; H05K3/146; H05K3/38; H05K3/388; H05K3/46; H05K3/4611; H05K3/4626; H05K3/4629; H05K3/4644; H05K3/467; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49155; Y10T29/49163

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 205 words
A process for forming a top surface metallurgy pattern on a ceramic substrate characterized by the steps of: providing an unsintered green ceramic substrate (30), forming indented lines (40) in the surface of the ceramic substrate that defines the desired surface metallurgy pattern, sintering the ceramic substrate, depositing a substantially uniform metal layer (42) of at least one metal over at least a portion of the surface of the ceramic substrate including said indented lines, the metal being relatively thin on the side walls of the indented lines, applying a masking layer (46) of material over the metal layer, which material of said masking layer is resistant to an etchant of the metal of the metal layer, removing portions of said masking layer overlying the metal layer areas on the flat surface areas of said ceramic substrate, but leaving intact the masking layer portions overlying the metal layer portions in the indented lines, exposing the top surface of said ceramic substrate to an etchant for the metal of the metal layer thereby removing the exposed metal areas but leaving intact the metal layer portions in the indented lines that are covered by said masking layer portions, and removing the remaining portions of the masking layer.
Claim 2
Dependent Claim 205 words
A process for forming a top surface metallurgy pattern on a ceramic substrate characterized by the steps of: providing an unsintered green ceramic substrate (30), forming indented lines (40) in the surface of the ceramic substrate that defines the desired surface metallurgy pattern, sintering the ceramic substrate, depositing a substantially uniform metal layer (42) of at least one metal over at least a portion of the surface of the ceramic substrate including said indented lines, the metal being relatively thin on the side walls of the indented lines, applying a masking layer (46) of material over the metal layer, which material of said masking layer is resistant to an etchant of the metal of the metal layer, removing portions of said masking layer overlying the metal layer areas on the flat surface areas of said ceramic substrate, but leaving intact the masking layer portions overlying the metal layer portions in the indented lines, exposing the top surface of said ceramic substrate to an etchant for the metal of the metal layer thereby removing the exposed metal areas but leaving intact the metal layer portions in the indented lines that are covered by said masking layer portions, and removing the remaining portions of the masking layer.
Claim 3
Dependent Claim 63 words
The process of claim 1 characterized in that said green ceramic substrate is a laminated multi-layer substrate including an internal metallurgy system that'includes metal filled vias (37) that extend through at least the upper laminated sheet of the substrate, and said indented lines that define the desired surface metallurgy pattern being in alignment with and selectively overlying in part said metal filled vias.
Claim 4
Dependent Claim 60 words
The process of claim 1 characterized in that said indented lines defining the surface metallurgy pattern are formed by heating the substrate at least to the softening temperature of the resin used in the green ceramic material of the substrate, and an embossed die (41) defining the desired surface metallurgy pattern is pressed against the top surface of the substrate.
Claim 5
Dependent Claim 62 words
The process of claim 1 characterized in that the green ceramic material of said substrate includes alumina with an average particle diameter size in the range of 2 µm to 8 µm, and the width of said indented lines is approximately three times the diameter of the particles and the depth of said indented lines is in the range of 12-50 µm.
Claim 6
Dependent Claim 20 words
The process of claim 1 characterized in that said uniform metal layer is comprised of a plurality of metal layers.
Claim 7
Dependent Claim 33 words
The process of claim 1 characterized in that said metal layer is deposited by vapor deposition techniques, which leave a relatively thin layer of metal on the side walls of the indented pattern.
Claim 8
Dependent Claim 33 words
The process of claim 1 characterized in that said metal layer is deposited by gravity settling techniques, which leave a relatively thin layer of metal on the side walls of the indented pattern.
Claim 9
Dependent Claim 50 words
The process of claim 1 characterized in that the green ceramic material of said substrate is a glass-ceramic mixture having a coefficient of expansion that substantially matches the coefficient of expansion of Si, and a low sintering temperature that permits the use of non-refractory metals for the internal metallurgy system.
Claim 10
Dependent Claim 53 words
The process of claim 2 characterized in that said internal metallurgy system is formed of a refractory metal selected from the group consisting of Mo, Ta and W, and mixtures thereof, and said surface metal layer is a high conductivity metal selected from the group consisting of Cu, Ag, Au, and alloys thereof.
Claim 11
Dependent Claim 76 words
The process of claim 2 characterized in that said indented lines at least define a fan-out metallurgy pattern for an 1/0 solder pad configuration (32) for interconnecting a semiconductor device to the internal metallurgy system of said substrate and said fan-out metallurgy pattern includes enlarged areas defining engineering change pads and includes small unconnected areas overlying a single metal filled via, which unconnected area defines a power pad for powering the device to be connected thereto.
Claim 12
Dependent Claim 31 words
The process of claim 3 characterized in that the green ceramic material of said substrate includes polyvinyl butyral resin material and said temperature is in the range of 75 to 95°C.
Claim 13
Dependent Claim 34 words
The process of claim 5 characterized in that said metal layer is comprised of a first layer of Cr, a second intermediate relatively thick layer of Cu, and a thin overlying layer of Au.
Claim 14
Dependent Claim 63 words
The process of claim 10 characterized in that it further includes placing a block-out mask on the surface of said substrate having openings that expose the areas designated as I/O solder pads, depositing a relatively thick layer of solder on the block-out mask and through the openings on the substrate, and heating the substrate to re-form the deposited solder into I/O solder mounds.
Claim 15
Dependent Claim 49 words
The process of claim 12 characterized in that it further includes placing a block-out mask on the surface of said substrate having openings that expose the areas designated as engineering change pads, and depositing a layer of Au on the block-out mask and through the openings on the substrate.

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