EP0174773A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device having interconnection layers
Assignee: STC PLC
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Filing: 1985-08-29
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Granted: —
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Expires: 2005-08-29
Abstract
Abstract 57 In order to prevent diffusion of silicon from under a titanium disilicide interconnect (1) and into an overlying aluminium layer (6), the disilicide is selectively nitrided at the points where interconnection between the disilicide and aluminium is required via holes (4) in a silicon dioxide layer (3). The titanium nitride contacts (5) thus formed in a truly self-aligned manner provide a good barrier to silicon diffusion whilst having an acceptable low resistivity.
Inventors
- 👤 Peter Denis Scovell
- 👤 Paul John Rosser
- 👤 Gary John Tomkins
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 07:22
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; Y; Y10; Y10S; Y10S148/00; Y10S148/019
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
30 words
A semiconductor device character t b; a metallic silicide element (1) and metal element (6) in electrical contact therewith via a nitrided region (5) of the metallic silicide element (1).
Claim 2
Dependent Claim
30 words
A semiconductor device character t b; a metallic silicide element (1) and metal element (6) in electrical contact therewith via a nitrided region (5) of the metallic silicide element (1).
Claim 3
Dependent Claim
55 words
2 . A semiconductor device as claimed in claim 1, characterised in that the metallic silicide element (1) is electrically insulated from the metal element (6) by a silicon dioxide layer (3) except at said nitrided region (5), which nitrided region (5) has been formed via a through hole in the silicon dioxide layer (3).
Claim 4
Dependent Claim
21 words
A semiconductor device as claimed in claim 1 or claim 2 characterised in that said metallic silicide (1) is titanium disilicide.
Claim 5
Dependent Claim
22 words
A semiconductor device as claimed in any one of the preceding claims characterised in that the metal element (6) is of aluminium.
Claim 6
Dependent Claim
32 words
A semiconductor device as claimed in claim 3 characterised in that the nitrided region (5) comprises titanium nitride formed by annealing in nitrogen the titanium disilicide (1) exposed via the through hole.
Claim 7
Independent Claim
101 words
A method of manufacturing a semiconductor device characterised by the steps of forming a metallic silicide element (1) on a semiconductor wafer (2), providing an electrically insulating layer (3) over the wafer, exposing a region of the metallic silicide element (1) via a hole in the electrically insulating layer (3), annealing the wafer in nitrogen whereby to locally nitride (5) the exposed metallic silicide region (1), metallising the wafer, and patterning the metallisation to form a metal element (6), the metallic silicide element (1) being in electrical contact with the metal element (6) via the locally nitrided metallic silicide region (5).
Claim 8
Independent Claim
101 words
A method of manufacturing a semiconductor device characterised by the steps of forming a metallic silicide element (1) on a semiconductor wafer (2), providing an electrically insulating layer (3) over the wafer, exposing a region of the metallic silicide element (1) via a hole in the electrically insulating layer (3), annealing the wafer in nitrogen whereby to locally nitride (5) the exposed metallic silicide region (1), metallising the wafer, and patterning the metallisation to form a metal element (6), the metallic silicide element (1) being in electrical contact with the metal element (6) via the locally nitrided metallic silicide region (5).
Claim 9
Dependent Claim
18 words
A method as claimed in claim 6 characterised in that the insulating layer (3) is of silicon dioxide.
Claim 10
Dependent Claim
20 words
A method as claimed in claim 7 or claim 8 characterised in that the metallic silicide (1) is titanium disilicide.
Claim 11
Independent Claim
21 words
A method as claimed in any one of claims 6 to 8 characterised in that the metallisation (6) is of aluminium.
Claim 12
Independent Claim
41 words
A method of manufacturing a semiconductor device characterised by the steps of forming a titanium disilicide interconnect (1), locally nitriding a region (5) of the interconnect (1) and disposing an aluminium element (6) in electrical contact with the nitrided region (5).
Claim 13
Independent Claim
41 words
A method of manufacturing a semiconductor device characterised by the steps of forming a titanium disilicide interconnect (1), locally nitriding a region (5) of the interconnect (1) and disposing an aluminium element (6) in electrical contact with the nitrided region (5).
References Cited (Backward Citations)
No citation records indexed.
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