EP0186346A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Vertically layered momom tunnel device
Assignee: Eaton Corp
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Filing: 1985-12-04
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Granted: —
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Expires: 2005-12-04
Abstract
Abstract MOMOM structural geometry and fabrication techniques are disclosed. First and second metal layer strips (6 and 10) are supported on an insulating substrate (4) and have vertically overlapped portions sandwiched between insulating layers (8, 12). A generally vertical side (18) is defined through the layers to the substrate to expose vertical edges (20, 24) of the metal layers which are oxidized (32, 34) and covered by a third metal layer (44 extending therebetween. In the preferred embodiment, the middle insulating layer (8) is undercut (28), oxidized (36, 40), and filled with metallization (50), to provide a vertical rectilinear conduction path.
Inventors
- 👤 James Anthony Benjamin
- 👤 Robert Walter Lade
- 👤 Herman Peter Schutten
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 14:29
CPC Classifications
H; H10; H10N; H10N70/00; Y; Y10; Y10S; Y10S438/00; Y10S438/957
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
72 words
An MONOM tunnel device (2) comprising: an insulating substrate (4); a first metal layer (6) on said substrate: a first insulating layer (8) on said first metal layer; a second metal layer (10) on said first insulating layer; a first oxidation layer (32) on said first metal layer; a second oxidation layer (34) on said second metal layer (10); and a third metal layer (44,48,50) between said first and second oxidation layers.
Claim 2
Dependent Claim
72 words
An MONOM tunnel device (2) comprising: an insulating substrate (4); a first metal layer (6) on said substrate: a first insulating layer (8) on said first metal layer; a second metal layer (10) on said first insulating layer; a first oxidation layer (32) on said first metal layer; a second oxidation layer (34) on said second metal layer (10); and a third metal layer (44,48,50) between said first and second oxidation layers.
Claim 3
Dependent Claim
30 words
The invention according to claim 1 wherein said first and second metal layers comprise noncolinearl y aligned strips having portions vertically overlapped and separated by said first insulating layer therebetween.
Claim 4
Dependent Claim
103 words
The invention according to claim 2 comprising a second insulating layer (12) on said second metal layer (10), and wherein: said first and second metal layers and said first and second insulating layers extend horizontally and have a generally vertical side (18) exposing the edges (20,22,24) thereof; said first and second oxidation layers are on said exposed edges of respective said first and second metal layers; and said third metal layer (44-48 or 50) extends horizontally along the top of said second insulating layer and vertically along said side (18) of said layers over and between said first and second oxidation layers (32,34)
Claim 5
Dependent Claim
83 words
The invention according to claim 3 wherein: said first insulating layer is undercut from said vertical side; said first oxidation layer extends horizontally along the top of said first metal layer along said undercut; said second oxidation layer extends horizontally along the bottom of said second metal layer along said undercut and spaced above said horizontal first oxidation layer extension; and said third metal layer includes a portion extending horizontally inwardly into said undercut between said horizontal first and second oxidation layer extensions.
Claim 6
Dependent Claim
75 words
An MOMOM tunnel device comprising: first and second metal layers supported on a substrate and having vertically overlapped portions separated by an insulating layer which is undercut, oxidized, and filled with metallization to provide a vertical rectilinear M-O-M-O-M path through: said first metal layer - the oxidation layer on the top of said first metal layer - said metallization - the oxidation on the bottom of said second metal layer - said second metal layer.
Claim 7
Dependent Claim
75 words
An MOMOM tunnel device comprising: first and second metal layers supported on a substrate and having vertically overlapped portions separated by an insulating layer which is undercut, oxidized, and filled with metallization to provide a vertical rectilinear M-O-M-O-M path through: said first metal layer - the oxidation layer on the top of said first metal layer - said metallization - the oxidation on the bottom of said second metal layer - said second metal layer.
Claim 8
Dependent Claim
39 words
The invention according to claim 5 wherein the junction between said first metal layer and said first mentioned oxidation layer has substantially the same area as the junction between said second metal layer and said second mentioned oxidation layer.
Claim 9
Dependent Claim
33 words
The invention according to claim 6 wherein the junction between said first oxidation layer and said metallization has substantially the same area as the junction between said second oxidation layer and said metallization.
Claim 10
Dependent Claim
19 words
The invention according to claim 5 wherein said insulating layer is undercut horizontally inwardly from a generally vertical edge.
Claim 11
Dependent Claim
25 words
The invention according to claim 8 wherein said first and second metal layers comprise horizontal strips each extending beyond said overlap in noncolinearly aligned relation.
Claim 12
Dependent Claim
87 words
The invention according to claim 9 wherein said strips form a V-shape at substantially a 90° angle to each other, said area of overlap being at the conjoint of the legs of the V, at least a portion of said conjoint being etched to provide said generally vertical edge facing away from said legs of the V, said insulating layer comprising fast etch rate material which undercut etches horizontally inwardly away from said facing generally vertical edge and in a direction toward said legs of the V.
Claim 13
Dependent Claim
167 words
The invention according to claim 10 comprising a second insulating layer on said second metal layer, and wherein: said first and second metal layers and said first and second insulating layers extend horizontally, with the edges thereof being exposed by said generally vertical side; said first and second oxidization layers are on said exposed edges of respective said first and second metal layers and also extend horizontally inwardly into said undercut, said first oxidation layer extends horizontally along the top of said first metal layer, and said second oxidation layer extends hor - izontally along the bottom of said second metal layer and spaced above said horizontal first oxidation layer extension; said third metal layer extends horizontally along the top of said second insulating layer and generally vertically along said generally vertical side of said layers over and between said first and second oxidation layers, said third metal layer includes a portion extending horizontally inwardly into said undercut between said horizontal first and second oxidation layer extensions.
Claim 14
Independent Claim
105 words
A method for fabricating an MOMOM tunnel device comprising: providing an insulating substrate; forming a first metal layer on said substrate, then a first insulating layer on said first metal layer, then a second metal layer on said first insulating layer, wherein said layers have vertically overlapped portions; defining a generally vertical edge through said overlapped layer portions; subjecting said substrate and layers to an oxidizing atmosphere such that first and second oxidation layers are formed on the edges of respective said first and second metal layers exposed by said generally vertical side; forming a third metal layer between said first and second oxidation layers.
Claim 15
Independent Claim
105 words
A method for fabricating an MOMOM tunnel device comprising: providing an insulating substrate; forming a first metal layer on said substrate, then a first insulating layer on said first metal layer, then a second metal layer on said first insulating layer, wherein said layers have vertically overlapped portions; defining a generally vertical edge through said overlapped layer portions; subjecting said substrate and layers to an oxidizing atmosphere such that first and second oxidation layers are formed on the edges of respective said first and second metal layers exposed by said generally vertical side; forming a third metal layer between said first and second oxidation layers.
Claim 16
Dependent Claim
62 words
The invention according to claim 12 comprising: forming a second insulating layer on said second metal layer prior to said step of defining a generally vertical side; and forming said third metal layer horizontally along the top of said second insulating layer and generally vertically along said generally vertical side of said layers over and between said first and second oxidation layers.
Claim 17
Dependent Claim
127 words
The invention according to claim 13 comprising: providing said second insulating layer of a material having a faster etch rate than said second insulating layer; etching said layers to form an undercut in said first insulating layer extending generally horizontally inwardly from said generally vertical side; subjecting said layers and said substrate to an oxidizing atmosphere such that said first oxidation layer also extends horizontally along the top of said first metal layer along said undercut, and said second oxidation layer extends horizontally along the bottom of said second metal layer along said undercut and spaced above said horizontal first oxidation layer extension; and forming said third metal layer with a portion extending horizontally inwardly into said undercut between said horizontal first and second oxidation layer extensions.
Claim 18
Independent Claim
138 words
A method for fabricating an MOMOM tunnel device comprising: providing an insulating substrate; forming a first metal layer on said substrate, and then an insulating layer on said first metal layer, and then a second metal layer on said insulating layer such that said layers have vertically overlapped portions; defining a generally vertical side through said layers; forming an undercut in said insulating layer extending horizontally inwardly from said generally vertical edge; forming a first oxidation layer in said undercut extending horizontally along the top of said first metal layer; forming a second oxidation layer in said undercut extending horizontally along the bottom of said second metal layer and spaced above said first oxidation layer; and forming a third metal layer having a portion extending horizontally inwardly into said undercut between said first and second horizontal oxidation layers.
Claim 19
Independent Claim
138 words
A method for fabricating an MOMOM tunnel device comprising: providing an insulating substrate; forming a first metal layer on said substrate, and then an insulating layer on said first metal layer, and then a second metal layer on said insulating layer such that said layers have vertically overlapped portions; defining a generally vertical side through said layers; forming an undercut in said insulating layer extending horizontally inwardly from said generally vertical edge; forming a first oxidation layer in said undercut extending horizontally along the top of said first metal layer; forming a second oxidation layer in said undercut extending horizontally along the bottom of said second metal layer and spaced above said first oxidation layer; and forming a third metal layer having a portion extending horizontally inwardly into said undercut between said first and second horizontal oxidation layers.
Claim 20
Dependent Claim
70 words
The invention according to claim 15 comprising forming said oxidation layers by growing oxide in a field directed plasma, said field being directed generally vertically such that thick oxide grows along the generally vertical edges of said first and second metal layers exposed by said generally vertical side, and thinner oxide grows along said horizontal top and bottom surfaces of said respective first and second metal layers in said undercut.
Claim 21
Dependent Claim
77 words
The invention according to claim 16 comprising: forming a second insulating layer on said second metal layer and of a material having a slower etch rate than said first insulating layer; forming said undercut by etching said layers; forming said third metal layer horizontally along the top of said second insulating layer and vertically along said generally vertical side of said layers over and between said first and second oxidation layers including said thicker and thinner portions.
Claim 22
Dependent Claim
59 words
The invention according to claim 17 comprising providing said first and second metal layers of different material to provide different oxidation growth rates of said first and second oxidation layers such that one of said first and second oxidation layers in said undercut is vertically thicker than the other of said first and second oxidation layers in said undercut.
References Cited (Backward Citations)
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