EP0189136A2
Expired / Lapsed
EP
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Bipolar semiconductor device and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1986-01-17
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Granted: —
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Expires: 2006-01-17
Abstract
Abstract @ An n + -type buried layer (3) is formed in the surface region of a p-type semiconductor substrate (1). Insulating films (5, 9) are formed on the semiconductor substrate (1). The insulating films (5, 9) have openings (15, 17) located above the buried layer (3). An n-type monocrystalline silicon layer (19) is formed in one opening (15) located above the buried layer (3). A base region (25, 33) is formed in the monocrystalline silicon layer (19). The base region (25, 33) defines a remaining portion of the monocrystalline silicon layer (19) as a collector region. An emitter region (39) is formed in the base region (25, 33). A polycrystalline silicon layer (13) is buried in the insulating films (5, 9) to have ohmic contact with the base region (25, 33) and serve as a portion of a base connection region. The polycrystalline silicon layer (13) contains a p-type impurity and serves as an impurity diffusion source for the formation of an external base (25) of the base region (25, 33). An MoSi 2 layer (71 is buried in the insulating films (5, 9) to have ohmic contact with the polycrystalline silicon layer (13) and to serve as a portion of the base connection region, thereby reducing the base resistance. A conductive layer (21) for connection with a collector is formed in another opening (17).
Inventors
- 👤 Shigeru C/O Patent Division Komatsu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 13:20
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D10/054; H10D10/40; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D64/20; H10D64/27; H10D64/281; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
210 words
A semiconductor device having: a semiconductor substrate (1) of a first conductivity type; a buried layer (3) of a second conductivity type selectively formed in a surface region of said semiconductor substrate (1); at least one insulating film (5, 9) formed on said semiconductor substrate (1) and having openings (15, 17); a monocrystalline silicon layer (19) of the second conductivity type formed in at least one (15) of said openings (15, 17) and connected to said buried layer (3); a region (25, 33) of the first conductivity type selectively formed in said monocrystalline silicon layer (19); a region (39) of the second conductivity type selectively formed in said region (25, 33) of the first conductivity type; and a conductive layer (7, 13) buried in said insulating film (5, 9) and connected to said region (25, 33) of the first conductivity type, characterized in that the conductive layer comprises: a semiconductor layer (13) buried in said insulating film (5, 9) to be connected to said region (25, 33) of the first conductivity type; and a conductive layer (7) buried in said insulating layer (5, 9), connected to said semiconductor layer (13) of the first conductivity type, and made of material having a higher conductivity than that of said semiconductor layer (13).
Claim 2
Dependent Claim
210 words
A semiconductor device having: a semiconductor substrate (1) of a first conductivity type; a buried layer (3) of a second conductivity type selectively formed in a surface region of said semiconductor substrate (1); at least one insulating film (5, 9) formed on said semiconductor substrate (1) and having openings (15, 17); a monocrystalline silicon layer (19) of the second conductivity type formed in at least one (15) of said openings (15, 17) and connected to said buried layer (3); a region (25, 33) of the first conductivity type selectively formed in said monocrystalline silicon layer (19); a region (39) of the second conductivity type selectively formed in said region (25, 33) of the first conductivity type; and a conductive layer (7, 13) buried in said insulating film (5, 9) and connected to said region (25, 33) of the first conductivity type, characterized in that the conductive layer comprises: a semiconductor layer (13) buried in said insulating film (5, 9) to be connected to said region (25, 33) of the first conductivity type; and a conductive layer (7) buried in said insulating layer (5, 9), connected to said semiconductor layer (13) of the first conductivity type, and made of material having a higher conductivity than that of said semiconductor layer (13).
Claim 3
Dependent Claim
48 words
A semiconductor device according to claim 1, characterized in that: said semiconductor layer (13) is made of polycrystalline silicon containing an impurity of the first conductivity type; and said conductive layer (7) is made of a member selected from the group consisting of high-melting metals and silicides thereof.
Claim 4
Dependent Claim
36 words
A semiconductor device according to claim 1, characterized in that at least part (25) of said region (25, 33) of the first conductivity type is formed by diffusion of an impurity from said semiconductor layer (13).
Claim 5
Dependent Claim
46 words
A semiconductor device according to claim 1, characterized in that said semiconductor layer (13) is capable of substantial ohmic contact with said region (25, 33) of the first conductivity type, and said conductive layer (7) is capable of substantial ohmic contact with said semiconductor layer (13).
Claim 6
Dependent Claim
38 words
A semiconductor device according to claim 1, further comprising a conductive layer (21) buried in said insulating layer (5, 9) in at least the other (17) of said openings (15, 17) and connected to said buried layer (3).
Claim 7
Dependent Claim
19 words
A semiconductor device according to claim 1, further comprising an electrode terminal (45) connected to said conductive layer (7).
Claim 8
Dependent Claim
124 words
A semiconductor device according to claim 5, characterized in that: said conductive layer (21) buried in the other opening serves as a collector connection region; said region (25, 33) of the first conductivity type serves as a base and defines a remaining portion of said monocrystalline silicon layer (19) as a collector; said region (39) of the second conductivity type serves as an emitter; and said semiconductor layer (13) and said conductive layer (7) serve as a base connection region, and further comprising: a base electrode (45) connected to said conductive layer (7); a collector electrode (47) connected to conductive means (21), which serves as the collector connection region; and an emitter electrode (43) connected to said region (39) of the first conductivity type.
Claim 9
Independent Claim
253 words
A method of manufacturing a semiconductor device, comprising the steps of: selectively forming a buried layer (3) of a second conductivity type in a surface region of a semiconductor substrate (1) of a first conductivity type; forming at least one insulating film (5, 9) on said semiconductor substrate (1); and forming at least one monocrystalline silicon layer (19) of the second conductivity type in said insulating film (5, 9) on said buried layer (3), and forming a conductive layer (7, 13) to be buried in said insulating film (5, 9) and connected to said monocrystalline silicon layer (19), said monocrystalline silicon layer (19) having a region (25, 33) of the first conductivity type and a region (39) of the second conductivity type therein, characterized in that the step of forming said monocrystalline silicon layer and said conductive layer comprises the steps of: forming a semiconductor layer (13) to be buried in said insulating film (5, 9) and containing an impurity of the second conductivity type, and forming a conductive layer (7) connected thereto; forming a monocrystalline silicon layer (19) to be buried in the insulating layer on said buried layer (3), diffusing the impurity of the first conductivity type contained in said semiconductor layer (13) into said monocrystalline silicon layer (19) during formation of said monocrystalline silicon layer (19), and forming at least a portion (25) of said region (25, 33) of the first conductivity type; and selectively forming a region (39) of the second conductivity type in said monocrystalline silicon layer (19).
Claim 10
Independent Claim
253 words
A method of manufacturing a semiconductor device, comprising the steps of: selectively forming a buried layer (3) of a second conductivity type in a surface region of a semiconductor substrate (1) of a first conductivity type; forming at least one insulating film (5, 9) on said semiconductor substrate (1); and forming at least one monocrystalline silicon layer (19) of the second conductivity type in said insulating film (5, 9) on said buried layer (3), and forming a conductive layer (7, 13) to be buried in said insulating film (5, 9) and connected to said monocrystalline silicon layer (19), said monocrystalline silicon layer (19) having a region (25, 33) of the first conductivity type and a region (39) of the second conductivity type therein, characterized in that the step of forming said monocrystalline silicon layer and said conductive layer comprises the steps of: forming a semiconductor layer (13) to be buried in said insulating film (5, 9) and containing an impurity of the second conductivity type, and forming a conductive layer (7) connected thereto; forming a monocrystalline silicon layer (19) to be buried in the insulating layer on said buried layer (3), diffusing the impurity of the first conductivity type contained in said semiconductor layer (13) into said monocrystalline silicon layer (19) during formation of said monocrystalline silicon layer (19), and forming at least a portion (25) of said region (25, 33) of the first conductivity type; and selectively forming a region (39) of the second conductivity type in said monocrystalline silicon layer (19).
Claim 11
Dependent Claim
171 words
A method according to claim 8, characterized in that the step of forming said semiconductor layer and said conductive layer comprises the steps of: forming a conductive layer (13) in the surface region of said insulating film (5, 9) to be buried therein; forming an opening in a conductive film (7); forming a semiconductor layer (13) containing an impurity of the first conductivity type in at least sale opening (11); and forming an opening in said semiconductor layer (13); and the step of forming said monocrystalline silicon layer comprises the steps of: forming an opening (15) in an insulating film (5) under an opening in said semiconductor layer (13) using said semiconductor layer (13) as a mask; and growing a monocrystalline silicon layer (19) in said opening (15) of said insulating film (5) on said buried layer (3), allowing said monocrystalline silicon layer (19) to contact said semiconductor layer (13), and diffusing the impurity of the first conductivity type contained in said semiconductor layer (13) into said monocrystalline silicon layer (19).
Claim 12
Dependent Claim
79 words
A method according to claim 8, characterized in that said semiconductor layer (13) is made of monocrystalline silicon capable of substantial ohmic contact with said region (25, 33) of the first conductivity type and containing an impurity of the first conductivity type, and said conductive layer (7) is made of a member selected from the group consisting of high-melting metals and silicides thereof that are capable of substantial ohmic contact with said polycrystalline silicon constituting said semiconductor layer (13).
References Cited (Backward Citations)
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