Method for manufacturing a semiconductor device having an element isolation area

Abstract

Abstract A method for manufacturing a semiconductor device having an improved dielectric isolation is disclosed which comprises the steps of forming recesses in one surface portion of a first semiconductor substrate (1), forming an insulating film (3) on the surface of the first semiconductor substrate (1) including the inner surface of the recess, depositing a solid material (4) on the insulating film (3) with the recess filled with the solid material (4) so as to obtain a flat surface, mirror-polishing the flat surface, mirror-polishing one surface of a second semiconductor substrate (5), bonding the first and second semiconductor substrates (1, 5) with their mirror-polished surfaces contacting each other in a face-to-face relation, grinding the reverse surface of the first semiconductor substrate (1) thus bonded to partly expose the insulating film (3), and forming a functional element in that remaining portion (6) of the first semiconductor substrate at an area isolated by the insulating film.

Inventors

• 👤 Koichi Kitahara

Bibliographic Details