EP0224013A2
Expired / Lapsed
EP
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Method for producing coplanar multi-level metal/insulator films on a substrate
Assignee: International Business Machines Corp
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Filing: 1986-10-17
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Granted: —
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Expires: 2006-10-17
Abstract
Abstract The method comprises the following steps: providing a substrate (3) having an underlying metallization (4) therein; placing an insulator (5, 6, 8) on said substrate (3); selectively removing first portions of said insulator at first locations, said first portions partially penetrating through said insulator; selectively removing second portions of said insulator at second locations, said second portions penetrating fully through the remainder of said insulator; said second portions being in alignment with some of said first portions; simultaneously depositing metal (9) over said insulator to form said overlying metallization in said first locations and said stud via connections in said second locations, and removing any of said metal (9) which overlies said insulator at locations other than said first locations. The method is applied for forming simultaneously an overlying metallization pattern and stud via connections to an underlying metallization.
Inventors
- 👤 Melanie Min-Chieh Chow
- 👤 John Edward Cronin
- 👤 William Leslie Guthrie
- 👤 Carter Welling Kaanta
- 👤 Barbara Jean Luther
- 👤 William John Patrick
- 👤 Kathleen Alice Perry
- 👤 Charles Lambert Standley
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 05:00
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/086; H10P; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P52/00; H10W20/031; H10W20/056; H10W20/062; H05; H05K; H05K3/00; H05K3/02; H05K3/04; H05K3/10; H05K3/107; H05K3/46; H05K3/4644
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
134 words
A method for producing multi-level coplanar metal/insulator films comprising the steps of: providing a substrate (3) having an underlying metallization (4) therein; placing an insulator on said substrate; selectively removing first portions of said insulator at first locations where an overlying metallization is desired, said first portions partially penetrating through said insulator; selectively removing second portions of said insulator at second locations where stud via connections are desired, said second portions penetrating fully through the remainder of said insulator; said second portions being in alignment with some of said first portions; simultaneously depositing metal (9) over said insulator to form said overlying metallization in said first locations and said stud via connections in said second locations, and removing any of said metal (9) which overlies said insulator at locations other than said first locations.
Claim 2
Independent Claim
134 words
A method for producing multi-level coplanar metal/insulator films comprising the steps of: providing a substrate (3) having an underlying metallization (4) therein; placing an insulator on said substrate; selectively removing first portions of said insulator at first locations where an overlying metallization is desired, said first portions partially penetrating through said insulator; selectively removing second portions of said insulator at second locations where stud via connections are desired, said second portions penetrating fully through the remainder of said insulator; said second portions being in alignment with some of said first portions; simultaneously depositing metal (9) over said insulator to form said overlying metallization in said first locations and said stud via connections in said second locations, and removing any of said metal (9) which overlies said insulator at locations other than said first locations.
Claim 3
Dependent Claim
14 words
The method defined in claim 1 wherein said removing is accomplished by chemical-mechanical polishing.
Claim 4
Dependent Claim
28 words
The method defined in claim 1 or 2 wherein said insulator comprises: a first insulator layer (5); an etch stop layer (6), and a second insulator layer (8).
Claim 5
Dependent Claim
42 words
The method defined in claim 3 wherein said first portions are removed from second layer (8), and said second portions are removed from said etch stop layer (6) and said first layer (5), said first layer (5) being adjacent said substrate (3).
Claim 6
Dependent Claim
26 words
The method defined in claim 3 or 4 wherein said first and second layers (5, 8) are quartz, and said etch stop layer (6) is Al₂O₃.
Claim 7
Independent Claim
65 words
The method defined in any one of claims 3 to 5 wherein said first layer (5) is selected from the group comprised of sputtered quartz, phosphosilicate glass and polyimide, said second layer (8) is selected from the group comprised of quartz, polyimide and a composite consisting of Si₃N₄ and SiO₂, and said metal (9) is selected from the group comprised of Al-Cu, Al-Si and Tungsten.
Claim 8
Independent Claim
16 words
The method defined in any one of claims 1 to 6 wherein said insulator is planarized.
Claim 9
Independent Claim
30 words
The method defined in one of claims 1 to 7 wherein said steps other than said step of providing said substrate are repeated in sequence a desired number of times.
References Cited (Backward Citations)
No citation records indexed.
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