Radiation detecting device

Claim 1

A solid state radiation detecting device (10, 30, D), characterized by comprising a semiconductive layer (14, 34, 74, 90, 98), and a metal layer formed (16, 18, 36, 38, 76, 100, 102) on said semiconductive layer, said metal layer (16, 18, 36, 38, 76, 100, 102) substantially vertically receiving radiation rays entering itself and producing energy particles based on interactions therewith, said energy particles being introduced into said semiconductive layer (14, 3 4 , 79, 90, 98) and exciting said semiconductive layer (14, 34, 74, 90, 98) so as to produce electron-hole pairs, based on which an electrical radiation detecting signal is obtained.

Claim 18

A device for'sensing a radiation image comprising a substrate (50), and pixel sensors (D) which are two-dimensinally arranged on said substrate (50) to define rows and columns, characterized in that said sensors (D) comprise solid state radiation detectors each of which has semiconductor layers (74, 90, 98) and metal layers (76, 100, 102) which are stacked along the incident direction of the incident radiation image, said metal layers (76, 100, 102) being alternately arranged between the adjacent semiconductor layers, so that two neighbouring metal layers sandwich the corresponding semiconductor layer therebetween and equivalently constitute a capacitor, and said metal layers (76, 100, 102) selectively receiving the incident radiation image so as to produce free energy particles by interactions therewith, which are introduced into said semiconductor layers (74, 90, 98) and excite them so as to produce electron-hole pairs and that said device comprises: image signal readout means (52, 54, 62, 64, 66, 68) connected to said rows and columns of said radiation detectors (D), for precharging said radiation detectors (D) so as to initially accumulate charges thereon, and for reading out the charges which remain after recombination of the charges and the electron-hole pairs produced in said semiconductor layers (74, 90, 98) of each pixel sensor (Dij), and are collected by said metal layers (76, 100, 102), thereby obtaining an electrical image signal corresponding to the incident radiation image.

Claim 19

A device for'sensing a radiation image comprising a substrate (50), and pixel sensors (D) which are two-dimensinally arranged on said substrate (50) to define rows and columns, characterized in that said sensors (D) comprise solid state radiation detectors each of which has semiconductor layers (74, 90, 98) and metal layers (76, 100, 102) which are stacked along the incident direction of the incident radiation image, said metal layers (76, 100, 102) being alternately arranged between the adjacent semiconductor layers, so that two neighbouring metal layers sandwich the corresponding semiconductor layer therebetween and equivalently constitute a capacitor, and said metal layers (76, 100, 102) selectively receiving the incident radiation image so as to produce free energy particles by interactions therewith, which are introduced into said semiconductor layers (74, 90, 98) and excite them so as to produce electron-hole pairs and that said device comprises: image signal readout means (52, 54, 62, 64, 66, 68) connected to said rows and columns of said radiation detectors (D), for precharging said radiation detectors (D) so as to initially accumulate charges thereon, and for reading out the charges which remain after recombination of the charges and the electron-hole pairs produced in said semiconductor layers (74, 90, 98) of each pixel sensor (Dij), and are collected by said metal layers (76, 100, 102), thereby obtaining an electrical image signal corresponding to the incident radiation image.