EP0245515A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hitachi Ltd
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Filing: 1986-11-12
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Granted: —
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Expires: 2006-11-12
Abstract
Abstract To prevent the injection of minority carriers into a substrate when the potential undergoes changes due to noise or the like. In a semiconductor device having a substrate and sources and drains of insulated gate-type field-effect transistors or having collectors, bases and emitters of bipolar transistors in a plurality of isolation layers that are electrically isolated in the substrate, a voltage is applied to the substrate or to said plurality of isolation layers, said voltage falling outside a range in which the voltage applied to said sources and drains or to said collectors, bases and emitters can be varied.
Inventors
- 👤 Goro Kitsukawa
- 👤 Kiyoo Itoh
- 👤 Ryoichi Hori
- 👤 Takao Watanabe
- 👤 Katsuhiro Shimohigashi
- 👤 Noriyuki Homma
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 23:37
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/211; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10B; H10B12/00; H10B12/30; H10D84/40; H10D84/401; H10D84/856; H10D89/213
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
79 words
In a semiconductor device which has sources and drains of insulated-gate field effect transistors or collectors, bases and emitters of bipolar transistors within a substrate and a plurality of isolation layers isolated in the substrate; a semiconductor device characterized in that a voltage outside a varying range of applied voltages to respective electrodes of said source and drain or said collector, base and emitter is applied to at least one of said substrate and said plurality of isolation layers.
Claim 2
Dependent Claim
79 words
In a semiconductor device which has sources and drains of insulated-gate field effect transistors or collectors, bases and emitters of bipolar transistors within a substrate and a plurality of isolation layers isolated in the substrate; a semiconductor device characterized in that a voltage outside a varying range of applied voltages to respective electrodes of said source and drain or said collector, base and emitter is applied to at least one of said substrate and said plurality of isolation layers.
Claim 3
Dependent Claim
79 words
In a semiconductor device which has sources and drains of insulated-gate field effect transistors or collectors, bases and emitters of bipolar transistors within a substrate and a plurality of isolation layers isolated in the substrate; a semiconductor device characterized in that at least two unequal isolation voltages are applied to said substrate and the isolation layers which have conductivity types identical to each other, or to the plurality of isolation layers which have conductivity types identical to each other.
Claim 4
Dependent Claim
79 words
In a semiconductor device which has sources and drains of insulated-gate field effect transistors or collectors, bases and emitters of bipolar transistors within a substrate and a plurality of isolation layers isolated in the substrate; a semiconductor device characterized in that at least two unequal isolation voltages are applied to said substrate and the isolation layers which have conductivity types identical to each other, or to the plurality of isolation layers which have conductivity types identical to each other.
Claim 5
Dependent Claim
82 words
A semiconductor device having a semiconductor body, a semiconductor element includign at least one p-n junction provided in the body, power source means for the semiconductor element, and power source means for the body; characterized in that said power source means for said body supplies a voltage so as to prevent said p-n junction from being forward-biased even when an input voltage opposite in polarity to an input voltage which is originally expected as an input to said semiconductor element has arrived.
Claim 6
Dependent Claim
82 words
A semiconductor device having a semiconductor body, a semiconductor element includign at least one p-n junction provided in the body, power source means for the semiconductor element, and power source means for the body; characterized in that said power source means for said body supplies a voltage so as to prevent said p-n junction from being forward-biased even when an input voltage opposite in polarity to an input voltage which is originally expected as an input to said semiconductor element has arrived.
Claim 7
Dependent Claim
30 words
A semiconductor device as defined in Claim 3, characterized in that said semiconductor body is made up of a semiconductor substrate, and an epitaxial grown layer formed on said substrate.
Claim 8
Dependent Claim
23 words
A semiconductor device as defined in Claim 3, characterized in that said semiconductor body is a semiconductor layer provided on an insulating substrate.
Claim 9
Dependent Claim
20 words
A semiconductor device as defined in Claim 4, characterized in that said semiconductor element includes at least a MOS transistor.
Claim 10
Dependent Claim
20 words
A semiconductor device as defined in Claim 4, characterized in that said semiconductor element includes at least a bipolar transistor.
Claim 11
Dependent Claim
24 words
A semiconductor device as defined in Claim 4, characterized in that said semiconductor element includes at least a MOS transistor and a bipolar transistor.
Claim 12
Dependent Claim
25 words
A semiconductor device as defined in Claim 3, characterized in that said semiconductor element is a semiconductor element to which an external input is applied.
Claim 13
Dependent Claim
40 words
A semiconductor device as defined in Claim 3, characterized in that said semiconductor element forms a semiconductor memory, and that said semiconductor element having said p-n junction not forward-biased is a semiconductor element to which an external input is applied.
References Cited (Backward Citations)
No citation records indexed.
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