Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
230 words
A high temperature environmental testing apparatus having a setting device for setting a semiconductor device (12) to be tested which includes a thermally and electrically conductive base member (22), characterized in that said setting device comprises : a microstrip matching circuit having a plurality of microstrip matching circuit plates (10) including an electrically insulative susbstrate (13), a microstrip matching pattern (19) formed on the top surface of said substrate, and a grounding pattern (18) formed on the back side of said substrate, said microstrip matching circuit being operatively connectable to said semiconductor device (12) ; an output terminal means (16) connected to said microstrip matching circuit, for providing said microstrip circuit plates (10) with signals and ground potential ; a grounding means (17;35) for electrically grounding said semiconductor device (12) ; a cooling block (14;44) for cooling said microstrip circuit mounted on said cooling block ; a heat block (15) for heating said semiconductor device (12); and supporting means (27,28) for supporting said heat block (15), said heat block (15) being attachable to said base member (22) of said semiconductor device (12) in surface- to-surface contact, being heated by a heating source, and being supported by said supporting means (27,28) such that said heat block (15) is positioned spatially isolated from said cooling block (14) by an air space except for the portion where said supporting means (27,28) contacts thereto.
Claim 2
Dependent Claim
230 words
A high temperature environmental testing apparatus having a setting device for setting a semiconductor device (12) to be tested which includes a thermally and electrically conductive base member (22), characterized in that said setting device comprises : a microstrip matching circuit having a plurality of microstrip matching circuit plates (10) including an electrically insulative susbstrate (13), a microstrip matching pattern (19) formed on the top surface of said substrate, and a grounding pattern (18) formed on the back side of said substrate, said microstrip matching circuit being operatively connectable to said semiconductor device (12) ; an output terminal means (16) connected to said microstrip matching circuit, for providing said microstrip circuit plates (10) with signals and ground potential ; a grounding means (17;35) for electrically grounding said semiconductor device (12) ; a cooling block (14;44) for cooling said microstrip circuit mounted on said cooling block ; a heat block (15) for heating said semiconductor device (12); and supporting means (27,28) for supporting said heat block (15), said heat block (15) being attachable to said base member (22) of said semiconductor device (12) in surface- to-surface contact, being heated by a heating source, and being supported by said supporting means (27,28) such that said heat block (15) is positioned spatially isolated from said cooling block (14) by an air space except for the portion where said supporting means (27,28) contacts thereto.
Claim 3
Dependent Claim
17 words
An apparatus according to claim 1, characterized in that said grounding means is a metallic foil (17).
Claim 4
Dependent Claim
21 words
An apparatus according to claim 2, characterized in that said metallic foil (17) is made of copper and is gold plated.
Claim 5
Independent Claim
32 words
An apparatus according to any one of claims 2 and 3, characterized in that said metallic foil (17) is electrically connected to said grounding pattern (18) of said microstrip matching circuit plate.
Claim 6
Independent Claim
26 words
An apparatus according to any one of claims 2 to 4, characterized in that said metallic foil (17) is electrically connected to said cooling block (14).
Claim 7
Independent Claim
55 words
An apparatus according to any one of claims 2 to 5, characterized in that said metallic foil (17) is inserted between said heat block (15) and said base member (22) of said semiconductor device (12), and said metallic foil (17), said heat block (15) and said base member (22) are tightly contacted to each other.
Claim 8
Dependent Claim
61 words
An apparatus according to claim 1, characterized in that said grounding means is a projection (35) formed on a side wall of said cooling block (44) facing to a surface of said base member (22) of said semiconductor device (12), and disposed such that the confronting surface of said projection (35) is in electrical contact with said base member (22) .
Claim 9
Dependent Claim
48 words
An apparatus according to claim 7, characterized in that it further comprises a metallic seat block (34) on which said microstrip matching circuit is disposed and said projection (35) is formed on a wall of said metallic seat facing said metallic base (22) of said semiconductor device (12).
Claim 10
Independent Claim
27 words
An apparatus according to any one of claims 1 to 8, characterized in that said supporting means comprises a pair of supporting plates (27,28) made of metal.
Claim 11
Dependent Claim
52 words
An apparatus according to claim 9, characterized in that said supporting plates (27,28) are attached to said heat block (15) at portions in the vicinity of the ends of said heating block, while the portion where said semiconductor device (12) is to be set is the center of said heat block (15).
Claim 12
Independent Claim
44 words
An apparatus according to any one of claims 9 and 10, characterized in that each supporting plate (27,28) is fixed to said heat block (15) with the facing surfaces of said heat block and said supporting plates being spaced by a ceramic spacer (30).
Claim 13
Independent Claim
100 words
A method for performing a high temperature environmental test of a semiconductor device employing the apparatus recited in any one of claims 1 to 11, comprising the steps of : mounting said semiconductor device (12) on said heat block (15) ; connecting leads of said semiconductor device to transmission lines (19a) of said microstrip matching circuit plates (10) ; raising the temperature of said semiconductor device (12) to a predetermined value by heating said heat block (15), and maintaining said temperature ; and applying an input signal and the ground potential to said semiconductor device through said transmission lines (19a).