Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
107 words
A solar battery comprising a substrate, a first semiconductor layer of a first conduction type comprising a single crystal singly grown on a nucleation surface (S NDL ) formed on the surface of said substrate as the base for growing, said nucleation surface (S NDL ) being comprised of a material which is sufficiently greater in nucleation density (ND) than the material constituting the surface of said substrate and having a sufficiently small area such that only a single nucleus grows, a second semiconductor layer of a second conduction type different from the conduction type of said first semiconductor layer and means for taking out the power.
Claim 2
Dependent Claim
107 words
A solar battery comprising a substrate, a first semiconductor layer of a first conduction type comprising a single crystal singly grown on a nucleation surface (S NDL ) formed on the surface of said substrate as the base for growing, said nucleation surface (S NDL ) being comprised of a material which is sufficiently greater in nucleation density (ND) than the material constituting the surface of said substrate and having a sufficiently small area such that only a single nucleus grows, a second semiconductor layer of a second conduction type different from the conduction type of said first semiconductor layer and means for taking out the power.
Claim 3
Dependent Claim
45 words
A solar battery according to claim 1, wherein a third single crystalline semiconductor layer having an impurity concentration lower than that of said first semiconductor layer is formed on said first semiconductor layer, and said second semiconductor layer is formed on the third semiconductor layer.
Claim 4
Dependent Claim
31 words
A solar battery according to claim 1, wherein a plural number of pairs of said first semiconductor layer and said second semiconductor layer are formed on the surface of said substrate.
Claim 5
Dependent Claim
18 words
A solar battery according to claim 1,2 or 3, wherein said first semiconductor layer is comprised of silicon.
Claim 6
Dependent Claim
129 words
A process for preparing a solar battery comprising: effecting formation of a first semiconductor layer of a first conduction type on the surface of a substrate including the step of adding to the surface of said substrate a material different than the material constituting the surface of said substrate which is sufficiently greater in nucleation density (ND) than the material constituting the surface of said substrate in a sufficiently small area such that crystal growing occurs from only a single nucleus to thereby form a nucleation surface, applying crystal forming treatment to said substrate to form a single nucleus on the nucleation surface and growing a single crystal from the single nucleus; and then forming a second semiconductor layer of a second conduction type above said first semiconductor layer.
Claim 7
Dependent Claim
129 words
A process for preparing a solar battery comprising: effecting formation of a first semiconductor layer of a first conduction type on the surface of a substrate including the step of adding to the surface of said substrate a material different than the material constituting the surface of said substrate which is sufficiently greater in nucleation density (ND) than the material constituting the surface of said substrate in a sufficiently small area such that crystal growing occurs from only a single nucleus to thereby form a nucleation surface, applying crystal forming treatment to said substrate to form a single nucleus on the nucleation surface and growing a single crystal from the single nucleus; and then forming a second semiconductor layer of a second conduction type above said first semiconductor layer.
Claim 8
Dependent Claim
42 words
A process according to claim 5, further comprising forming on said first semiconductor layer a third single crystalline semiconductor layer having an impurity concentration lower than that of said first semiconductor layer in advance of the formation of said second semiconductor layer.
Claim 9
Dependent Claim
30 words
A process according to claim 5, wherein a plural number of pairs of said first semiconductor layer and said second semiconductor layer are formed on the surface of said substrate.