EP0297348B1
Expired / Lapsed
EP
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Method for chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl metal complex
Assignee: International Business Machines Corp
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Filing: 1988-06-14
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Granted: 1992-03-04
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Expires: 2008-06-14
Abstract
No abstract record available.
Inventors
- 👤 David Bruce Beach
- 👤 Joseph Martin Jasinski
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 15:40
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; H; H10; H10P; H10P14/00; H10P14/40; H10P14/412
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
101 words
A method for depositing a metal selected from the group consisting of Cu, Ag, and Au, including the steps of: heating a substrate onto which deposition of said metal is to occur, said substrate being located in a deposition chamber, producing a vapor of a precursor containing said metall in said chamber in the vicinity of said substrate, said precursor being a cyclopentadienyl ring of said metal having attached thereto a 2 electron donor ligand, said metal to be deposited being present in said precursor in a +1 oxidation state, and decomposing said vapor to deposit said metal on said substrate.
Claim 2
Dependent Claim
26 words
The method of claim 1, where said cyclopentadienyl ring includes substituents thereon, said substituent selected from the group consisting of alkyl, halide, and pseudo halide groups.
Claim 3
Dependent Claim
23 words
The method of claim 1, where said 2 electron donor ligand is selected from the group consisting of trivalent phosphines, amines, and arsines.
Claim 4
Dependent Claim
18 words
The method of claim 1, where the temperature of said substrate during deposition thereon is less than 500°C.
Claim 5
Dependent Claim
16 words
The method of claim 4, where the temperature of said substrate is between 120°C and 300°C.
Claim 6
Dependent Claim
14 words
The method of claim 4, where said substrate is heated by a radiation beam.
Claim 7
Dependent Claim
14 words
The method of claim 6, where said radiation beam is produced by a laser.
Claim 8
Dependent Claim
21 words
The method of claim 1, where said substrate is selected from the group consisting of insulators, polymers, metals, ceramics and semiconductors.
Claim 9
Dependent Claim
18 words
The method of claim 8, where said substrate has recesses therein, said metal being deposited in said recesses.
Claim 10
Dependent Claim
14 words
The method of claim 9, where said recesses are located in a polymer layer.
Claim 11
Dependent Claim
14 words
The method of claim 1, where said deposited metal includes less than 15% carbon.
Claim 12
Dependent Claim
14 words
The method of claim 1, where said method is a chemical vapor deposition method.
Claim 13
Dependent Claim
29 words
The method of claim 1, where said metal is copper and said substrate has copper lines thereon onto which said method deposits copper for repair of said copper lines.
Claim 14
Dependent Claim
16 words
The method of claim 1, where said chamber is essentially a cold wall, heated substrate apparatus.
Claim 15
Dependent Claim
18 words
The method of claim 14, where said chamber is heated to promote the transport of said vapor therein.
Claim 16
Independent Claim
90 words
A method for chemical vapor deposition of Cu, including the following steps: placing a substrate in a reaction chamber, evacuating said chamber to remove contaminants therefrom, producing a vapor of a Cu precursor in said chamber, said precursor being a cyclopentadienyl ring of copper having attached thereto a 2 electron donor ligand, said copper being present in said precursor in a +1 oxidation state, heating said substrate, transporting said vapor to said substrate, the temperature of said substrate being sufficient to decompose said vapor to deposit copper on said substrate.
Claim 17
Dependent Claim
14 words
The method of claim 16, where said precursor is a cyclopentadienyl-trialkyl phosphine copper complex.
Claim 18
Independent Claim
128 words
A method for chemical vapor deposition of a metal-doped Al film, the metal being selected from the group consisting of Cu, Ag, and Au, including the following steps: placing a substrate in a reaction chamber, evacuating said chamber to remove contaminants therefrom, producing a first vapor of a precursor containing said metal in said chamber, said precursor being a cyclopentadienyl ring of said metal having attached thereto a 2 electron donor ligand, said metal being present in said precursor in a +1 oxidation state, producing a second vapor of an Al precursor in said chamber, heating said substrate, transporting said first and second vapors to said substrate, and decomposing said vapors to simultaneously deposit said metal and Al on said substrate, thereby producing said metal doped Al film.
Claim 19
Dependent Claim
88 words
The method of claim 18, where a first vapor containing a copper precursor is produced in said chamber, said precursor being a cyclopentadienyl ring of copper having attached thereto a 2 electron donor ligand, said copper being present in said precursor in a +1 oxidation state; a second vapor containing an aluminum precursor is produced in said chamber; said vapors are decomposed to deposit aluminum simultaneously with the deposition of copper on said substrate; and the resulting Al-Cu composite is annealed to produce a Cu doped Al layer.
Claim 20
Independent Claim
26 words
The method of claims 18 and 19, where separate layers of Cu and Al are deposited on said substrate, and subsequently annealed to form Cu-Al conductor.
References Cited (Backward Citations)
No citation records indexed.
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