EP0328078A2
Expired / Lapsed
EP
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Reactive ion etching apparatus
Assignee: JSR Corp
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Filing: 1989-02-08
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Granted: —
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Expires: 2009-02-08
Abstract
Abstract A reactive ion etching apparatus used in the manufacturing process of semiconductor elements such as ICs and LSIs is herein disclosed. The material (18) to be etched is supported by a chucking device(124) disposed on a negative electrode ( 101) and in this apparatus, a magnetic field parallel to the surface of the material (18) to be etched is generated. The reactive ion etching is carried out while cooling the negative electrode ( 101) to a temperature of not more than 0 DEG C.
Inventors
- 👤 Mitsunobu Koshiba
- 👤 Keiichi Yamada
- 👤 Yoshiyuki Harita
- 👤 Shin'ichi Kawamura
- 👤 Yuuji Furuto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 00:50
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32532; H01J37/32009; H01J37/32082; H01J37/3266; H01J37/32669; H01J37/32715; H01J37/32724; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; H10P72/70; H10P72/78; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3341
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
55 words
A reactive ion etching apparatus characterized by comprising means for generating magnetic field parallel to the surface of a material to be etched; a negative electrode; supporting means mounted on said negative electrode for supporting the material to be etched; and means for cooling said negative electrode to a temperature of not more than 0°C.
Claim 2
Dependent Claim
55 words
A reactive ion etching apparatus characterized by comprising means for generating magnetic field parallel to the surface of a material to be etched; a negative electrode; supporting means mounted on said negative electrode for supporting the material to be etched; and means for cooling said negative electrode to a temperature of not more than 0°C.
Claim 3
Dependent Claim
29 words
A reactive ion etching apparatus according to claim 1, characterized in that said negative electrode is cooled to a temperature ranging from 0 to -40°C by said cooling means.
Claim 4
Dependent Claim
29 words
A reactive ion etching apparatus according to claim 1, characterized in that said negative electrode is cooled to a temperature ranging form -20 to -40°C by said cooling means.
Claim 5
Dependent Claim
20 words
A reactive ion etching apparatus according to claim 1, characterized in that said supporting means is an electrostatic chucking device.
Claim 6
Dependent Claim
33 words
A reactive ion etching apparatus according to claim 4, characterized in that said electrostatic chucking device comprises a piece of plate-like electrode and a ferroelectric substance in which said plate-like electrode is embedded.
Claim 7
Dependent Claim
39 words
A reactive ion etching apparatus according to claim 5, characterized in that said ferroelectric substance is provided thereon with a plurality of grooves and the apparatus further comprises means for introducing an inert gas into said plurality of grooves.
Claim 8
Dependent Claim
18 words
A reactive ion etching apparatus according to claim 6, characterized in that said inert gas is helium gas.
Claim 9
Dependent Claim
56 words
A reactive ion etching apparatus according to claim 6, characterized in that the depth of said plurality of grooves ranges from 5µm to 1mm and the total area of the grooves ranges from 10 to 90% of the chucked area of the material to be etched when the material is chucked with said electrostatic chucking device.
Claim 10
Dependent Claim
49 words
A reactive ion etching apparatus according to claim 1, characterized in that said means for generating magnetic field parallel to the surface of the material to be etched comprises a permanent magnet disposed in said negative electrode and an auxiliary magnet disposed above said negative electrode through a space.
Claim 11
Dependent Claim
26 words
A reactive ion etching apparatus according to claim 1, characterized in that said material to be etched is cooled to a temperature not more than 40°C
References Cited (Backward Citations)
No citation records indexed.
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