EP0337556A1
Expired / Lapsed
EP
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Method of manufacturing a semiconductor body
Assignee: Koninklijke Philips NV
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Filing: 1989-04-07
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Granted: —
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Expires: 2009-04-07
Abstract
Abstract A method of manufacturing a silicon-on-insulator semiconductor body is characterized by the steps consisting in that a carrier body is temporarily connected to a supporting body with accurately flat and parallel major surfaces and having a thickness of at least 1/8 of the largest dimension of the carrier body, in that the free major surface of the carrier body is mechanically polished to a precision of at least ½ µm flatness, in that the carrier body is detached from the supporting body and the polished major surface is temporarily connected to the supporting body and the other major surface of the carrier body is mechanically polished to a precision of at least ½ µm flatness and a parallelism between the major surfaces of at least ½ µm whereupon a semiconductor body is connected through a major surface permanently to a major surface of the carrier body, in that then the semiconductor body is mechanically ground to a thickness of at least 50 µm larger than the desired ultimate layer thickness and is then alternately polished tribochemically and mechanically to a thickness of about 10 µm larger than the ultimately desired layer thickness, and in that there is ultimately polished tribochemically until the desired layer thickness of the semiconductor body is attained.
Inventors
- 👤 Jan Haisma
- 👤 Cornelis Lucas Adema
- 👤 Johan Gerrit De Bruin
- 👤 Theodorus Martinus Michielsen
- 👤 Gijsbertus Adrianus Spierings
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 02:21
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10P10/128; H10P52/00; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; Y; Y10; Y10S; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
268 words
A method of manufacturing a semiconductor body comprising at least a disk-shaped carrier body and a disk-shaped monocrystalline semiconductor body, in which at least one major surface of both bodies is made flat and optically smooth, the flat major surfaces of these two bodies being brought into contact with each other in order to obtain a permanent connection, whereupon the semiconductor body is reduced in thickness, characterized in that the carrier body is temporarily connected to a supporting body, which has accurately flat and parallel major surfaces and whose thickness is at least 1/8 of the largest dimension of the carrier body, in that the free major surface of the carrier body is mechanically polished to a precision of at least ½ µm flatness, in that the carrier body is detached from the supporting body and the polished major surface is temporarily connected to the supporting body, in that the other major surface of the carrier body is mechanically polished to a precision of at least ½ µm flatness and a parallelism between the major surfaces of at least ½ µm, in that, after the semiconductor body has been permanently connected through a major surface to a major surface of the carrier body, the semiconductor body is mechanically ground to a thickness of at least 50 µm larger than the desired ultimate layer thickness, in that there is then alternately polished tribochemically and polished mechanically to a thickness of about 10 µm larger than the ultimately desired layer thickness, and in that there is then polished tribochemically until the desired layer thickness of the semiconductor body is attained.
Claim 2
Independent Claim
268 words
A method of manufacturing a semiconductor body comprising at least a disk-shaped carrier body and a disk-shaped monocrystalline semiconductor body, in which at least one major surface of both bodies is made flat and optically smooth, the flat major surfaces of these two bodies being brought into contact with each other in order to obtain a permanent connection, whereupon the semiconductor body is reduced in thickness, characterized in that the carrier body is temporarily connected to a supporting body, which has accurately flat and parallel major surfaces and whose thickness is at least 1/8 of the largest dimension of the carrier body, in that the free major surface of the carrier body is mechanically polished to a precision of at least ½ µm flatness, in that the carrier body is detached from the supporting body and the polished major surface is temporarily connected to the supporting body, in that the other major surface of the carrier body is mechanically polished to a precision of at least ½ µm flatness and a parallelism between the major surfaces of at least ½ µm, in that, after the semiconductor body has been permanently connected through a major surface to a major surface of the carrier body, the semiconductor body is mechanically ground to a thickness of at least 50 µm larger than the desired ultimate layer thickness, in that there is then alternately polished tribochemically and polished mechanically to a thickness of about 10 µm larger than the ultimately desired layer thickness, and in that there is then polished tribochemically until the desired layer thickness of the semiconductor body is attained.
Claim 3
Dependent Claim
46 words
A method as claimed in Claim 1, characterized in that the thickness of the semiconductor layer is further reduced in that, after the thin semiconductor layer has been measured, there is thermally oxidized to an accurately determined depth, whereupon the thermal oxide is selectively etched away.
Claim 4
Dependent Claim
44 words
A method as claimed in Claim 1 or 2, characterized in that the supporting body is made of quartz, and in that the carrier body is made of a material having semiconductor, magnetic, piezo-electrical, photorefractive or electro-optical properties or a combination of these properties.
Claim 5
Dependent Claim
45 words
A method as claimed in Claim 3, characterized in that the monocrystalline semiconductor body is provided at the major surface to be connected to the carrier body with a silicon oxide layer, then with a silicon nitride layer and finally with a silicon oxide layer.
Claim 6
Dependent Claim
53 words
A method as claimed in Claim 1 or 2, characterized in that the supporting body is made of quartz, in that the carrier body is made of quartz and in that the monocrystalline semiconductor body is provided at the major surface to be connected to the carrier body with a silicon oxide layer.
Claim 7
Dependent Claim
62 words
A method as claimed in Claim 1 or 2, characterized in that the supporting body is made of quartz, in that the carrier body is made of an optically transparent material and in that the semiconductor body, before being connected, is provided on the side of the major surface to be connected with active semiconductor elements and the major surface is planarized.
References Cited (Backward Citations)
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