EP0343500A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Plasma etching apparatus
Assignee: NTT Inc
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Filing: 1989-05-18
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Granted: —
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Expires: 2009-05-18
Abstract
Abstract A plasma etching apparatus a first cathode electrode (1), an anode electrode (22), an annular second cathode electrode, a magnetic field applying unit (10, 11) and high-frequency power sources. An object to be etched (4) is placed on the first cathode electrode (1). The anode electrode (22) is arranged opposite to the first cathode electrode (1) so as to be separated therefrom and connected to a constant potential source. The second cathode electrode (20) is located between the first cathode electrode (1) and the anode electrode (22) and substantially surrounds the first cathode electrode in an insulated state. The magnetic field applying unit includes coils (10, 11) which generate lines of magnetic force passing through the annular second cathode electrode (20) substantially parallel to a surface of the first cathode electrode (1) on which the object to be etched (4) is placed. The high-frequency power sources are respectively connected to the first and second cathode electrodes to generate a plasma by gas discharge, thereby generating ions near the first and second cathode electrodes.
Inventors
- 👤 Sato Masaaki
- 👤 Arita Yoshinobu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 10:36
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/01; H10D48/04; H10D48/048; H10D48/049; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/32532; H01J37/32587; H01J37/3266; H01J37/34; H01J37/3402; H01J37/3405; H01L21/205
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
133 words
A plasma etching apparatus comprising: a first cathode electrode on which an object to be etched is placed; an anode electrode arranged opposite to said first cathode electrode so as to be separated therefrom and connected to a constant potential source; an annular second cathode electrode located between said first cathode electrode and said anode electrode and substantially surrounding said first cathode electrode in an insulated state; magnetic field applying means for generating lines of magnetic force passing through said annular second cathode electrode substantially parallel to a surface of said first cathode electrode on which the object to be etched is placed; and high-frequency power sources, respectively connected to said first and second cathode electrodes, for generating a plasma by gas discharge, thereby generating ions near said first and second cathode electrodes.
Claim 2
Dependent Claim
133 words
A plasma etching apparatus comprising: a first cathode electrode on which an object to be etched is placed; an anode electrode arranged opposite to said first cathode electrode so as to be separated therefrom and connected to a constant potential source; an annular second cathode electrode located between said first cathode electrode and said anode electrode and substantially surrounding said first cathode electrode in an insulated state; magnetic field applying means for generating lines of magnetic force passing through said annular second cathode electrode substantially parallel to a surface of said first cathode electrode on which the object to be etched is placed; and high-frequency power sources, respectively connected to said first and second cathode electrodes, for generating a plasma by gas discharge, thereby generating ions near said first and second cathode electrodes.
Claim 3
Dependent Claim
51 words
An apparatus according to claim 1, wherein frequencies of high-frequency voltages respectively applied from said high-frequency power sources to said first and second cathode electrodes are equal to each other, and said apparatus further comprises means for varying phases of the high-frequency voltages applied to said first and second cathode electrodes.
Claim 4
Dependent Claim
42 words
An apparatus according to claim 2, wherein said phase varying means advances a phase of the high-frequency voltage applied to said second cathode electrode from that of the high-frequency voltage applied to said first cathode electrode by 0 to 1/3 the wavelength.
Claim 5
Dependent Claim
31 words
An apparatus according to claim 1, wherein said magnetic field applying means includes a plurality of ring-like coils, said ring-like coils being arranged to be coaxial with said second cathode electrode.
Claim 6
Dependent Claim
88 words
An apparatus according to claim 4, wherein said magnetic field applying means comprises a first magnetic field generating coil arranged on a side of said first cathode electrode which is opposite to a side on which said second cathode electrode is present, a second magnetic field generating coil arranged on a side of said second cathode electrode which is opposite to a side on which said first cathode electrode is present, and coil power sources for supplying opposite currents to said first and second magnetic field generating coils.
Claim 7
Dependent Claim
33 words
An apparatus according to claim 1, wherein said magnetic field applying means generates a magnetic field whose lines of magnetic force are substantially parallel to surfaces of said first and second cathode electrodes.
Claim 8
Dependent Claim
105 words
An apparatus according to claim 6, wherein said magnetic field applying means comprises a first magnetic field generating coil arranged opposite to said anode electrode and near said first cathode electrode, a second magnetic field generating coil arranged to be surrounded by said second cathode electrode, a third magnetic field generating coil arranged to surround said second cathode electrode, and coil power sources for supplying currents having the same direction to said first and third magnetic field generating coils and a current to said second magnetic field generating coil in a direction opposite to that supplied to said first and third magnetic field generating coils.
Claim 9
Dependent Claim
135 words
An apparatus according to claim 6, wherein said magnetic field applying means comprises a first magnetic field generating coil arranged opposite to said anode electrode and near said first cathode electrode, a second magnetic field generating coil arranged to surround said first magnetic field generating coil and having a diameter larger than that of said first magnetic field generating coil, a third magnetic field generating coil arranged to be surrounded by said second cathode electrode, a fourth magnetic field generating coil arranged to surround said second cathode electrode, and coil power sources for supplying currents having the same direction to said first and fourth magnetic field generating coils and currents to said second and third magnetic field generating coils in a direction opposite to that supplied to said first and fourth magnetic field generating coils.
References Cited (Backward Citations)
US4422896A
Cited
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