EP0388011A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device.
Assignee: Toshiba Corp
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Filing: 1990-02-14
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Granted: —
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Expires: 2010-02-14
Abstract
Abstract In a semiconductor device including a substrate (21) having a wiring layer (22) formed on its major surface and a semiconductor element (11) having an electrode (12) formed on its major surface in which a face-down bonding is achieved with the major surface of the semiconductor element oppositely facing that major surface of the semiconductor substrate which is located opposite to the electrode on the semiconductor element, first bumps (13) formed of gold are formed on the electrode of the semiconductor element, second bumps (14) formed of an indium/tin alloy are formed on the first bumps and an electrical and mechanical bond is achieved, by the second bumps, between the first bumps and the wiring layer in which case the second bumps are heated to an extent not exceeding the melting point of the second bumps.
Inventors
- 👤 Miki C/O Intellectual Property Div. Mori
- 👤 Masayuki C/O Intellectual Property Div. Saito
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 18:11
CPC Classifications
B; B23; B23K; B23K35/00; B23K35/001; H; H10; H10W; H10W72/00; H10W72/30; H10W74/00; H10W74/01; H10W74/012; H10W74/10; H10W74/15; H10W72/01; H10W72/012; H10W72/01204; H10W72/01215; H10W72/01271; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/073; H10W72/20; H10W72/241; H10W72/251; H10W72/252; H10W72/351; H10W72/352; H10W72/353; H10W72/354; H10W72/851; H10W72/853; H10W72/856; H10W72/90; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/734; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49144
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
118 words
A semiconductor device including a semiconductor substrate (21) having a wiring layer (22) formed on its major surface and a semiconductor element (11) having an electrode (12) formed on its major surface with the major surface of the semiconductor element oppositely mounted over the major surface of the semiconductor substrate to bond the wiring layer (22) to the electrode (12), characterized in that said semiconductor device comprises: first bumps (13) formed on the electrode (12) and formed of gold; and second bumps (14) located between the first bump (13) and the wiring layer (22) to obtain an electrical/mechanical bond between the first bumps (13) and the wiring layer (22), said second bumps containing a metal, such as indium.
Claim 2
Dependent Claim
118 words
A semiconductor device including a semiconductor substrate (21) having a wiring layer (22) formed on its major surface and a semiconductor element (11) having an electrode (12) formed on its major surface with the major surface of the semiconductor element oppositely mounted over the major surface of the semiconductor substrate to bond the wiring layer (22) to the electrode (12), characterized in that said semiconductor device comprises: first bumps (13) formed on the electrode (12) and formed of gold; and second bumps (14) located between the first bump (13) and the wiring layer (22) to obtain an electrical/mechanical bond between the first bumps (13) and the wiring layer (22), said second bumps containing a metal, such as indium.
Claim 3
Dependent Claim
20 words
The semiconductor device according to claim 1, characterized in that said substrate (21) is composed of a liquid crystal panel.
Claim 4
Dependent Claim
19 words
The semiconductor device according to claim 1, characterized in that second bumps (14) are composed of an indium/tin alloy.
Claim 5
Dependent Claim
115 words
A semiconductor device including a semiconductor substrate (21) having a wiring layer (22) formed on its major surface and a semiconductor element (11) having an electrode (12) formed on its major surface with the major surface of the semiconductor element (11) oppositely mounted over the substrate to bond the electrode (12) to the wiring layer (22), characterized in that said semiconductor device comprises: first bumps (13) deposited on the electrode (12); and second bumps (14) provided between the first bumps (13) and the wiring layer (22) with the second bumps (14) deposited around a side wall of the first bumps to provide an electrical/mechanical bond between the first bump (13) and the wiring layer (22).
Claim 6
Dependent Claim
115 words
A semiconductor device including a semiconductor substrate (21) having a wiring layer (22) formed on its major surface and a semiconductor element (11) having an electrode (12) formed on its major surface with the major surface of the semiconductor element (11) oppositely mounted over the substrate to bond the electrode (12) to the wiring layer (22), characterized in that said semiconductor device comprises: first bumps (13) deposited on the electrode (12); and second bumps (14) provided between the first bumps (13) and the wiring layer (22) with the second bumps (14) deposited around a side wall of the first bumps to provide an electrical/mechanical bond between the first bump (13) and the wiring layer (22).
Claim 7
Dependent Claim
37 words
The semiconductor device according to claim 4, characterized in that said first bumps (13) are formed of gold, copper, nickel or solder; and said second bumps are formed of indium, tin, lead or silver or their alloy.
Claim 8
Dependent Claim
27 words
The semiconductor device according to claim 4, characterized in that said first bumps (13) are formed of gold and said second bumps (14) are an indium/tin alloy.
Claim 9
Dependent Claim
19 words
The semiconductor device according to claim 4, characterized in that said substrate is composed of a liquid crystal panel.
Claim 10
Independent Claim
140 words
A method for manufacturing a semiconductor device which includes a substrate (21) having a wiring layer (22) formed on its major surface and a semiconductor element having an electrode (12) formed on its major surface with the major surface of the electrode mounted to the major surface of the wiring layer on the substrate, characterized by the steps of: (a) forming first bumps (13) on the electrode of the semiconductor element; (b) forming second bumps (14) on the first bumps; and (c) heating the second bumps (14) to an extent not exceeding a melting point of the second bumps, while pressing the semiconductor element against the wiring layer (22) to cause the second bumps (14) to be brought into contact with the wiring layer (22), to obtain an electrical/mechanical bond between the first bumps (13) and the wiring layer (22).
Claim 11
Independent Claim
140 words
A method for manufacturing a semiconductor device which includes a substrate (21) having a wiring layer (22) formed on its major surface and a semiconductor element having an electrode (12) formed on its major surface with the major surface of the electrode mounted to the major surface of the wiring layer on the substrate, characterized by the steps of: (a) forming first bumps (13) on the electrode of the semiconductor element; (b) forming second bumps (14) on the first bumps; and (c) heating the second bumps (14) to an extent not exceeding a melting point of the second bumps, while pressing the semiconductor element against the wiring layer (22) to cause the second bumps (14) to be brought into contact with the wiring layer (22), to obtain an electrical/mechanical bond between the first bumps (13) and the wiring layer (22).
Claim 12
Dependent Claim
48 words
The method according to claim 8, characterized in that said first bumps (13) are formed of a metal, such as copper, nickel or solder, and said second bumps (14) are formed of a metal selected from the group consisting of indium, tin, lead and silver and their alloy.
Claim 13
Dependent Claim
28 words
The method according to claim 8, characterized in that said first bumps (13) are composed of gold and said second bumps (14) are composed of an indium/tin alloy.
Claim 14
Dependent Claim
27 words
The method according to claim 8, characterized in that said step (b) comprises forming second bumps (14) as a bulbous metal bumps on said first bumps (13).
References Cited (Backward Citations)
No citation records indexed.
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