MOS integrated circuit with adjustable threshold voltage

Abstract

Abstract The MOS cell with adjustable threshold voltage is a cell of the memory type, which can be programmed and erased electrically through charge accumulation by the tunnel effect under a floating gate. To obtain a circuit with adjustable threshold voltage, the cell is firstly "programmed" to zero in such a way that all the charges which may have accumulated are cleared, and then "erased" with source earthed, drain taken to the high potential and control gate taken to the potential desired for the threshold voltage VT of the circuit. At the end of this phase the threshold voltage is adjusted. Application in particular to circuits requiring, in MOS technology, precise voltage references, circuit of the detector or analogue-digital convertor type. <IMAGE>

Inventors

• 👤 Jacek Kowalski

Bibliographic Details