EP0425037A2
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EP
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A method of manufacturing a semiconductor device
Assignee: Philips Electronics UK Ltd
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Filing: 1990-10-19
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Granted: —
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Expires: 2010-10-19
Abstract
Abstract A semiconductor device (10) is formed by providing first and second semiconductor bodies (1 and 11) each having first and second major surfaces (2 and 3) and (12 and 13), respectively, defining a rectifying junction pattern (21) adjacent to at least one (12) of the first major surfaces, and bonding the first major surfaces (2 and 12) together to join the two semiconductor bodies (1 and 11) to form the semiconductor device (10) in which the rectifying junction pattern 21 defines a path for the flow of charge carriers between the second major surfaces. The rectifying junction pattern (21) is defined at the one first major surface (12) by an electrically conductive pattern (20) forming a Schottky junction (21) with at least one of the first and second semiconductor bodies (1 and 11).
Inventors
- 👤 John Alfred George Slatter
- 👤 Henry Edward Brockman
- 👤 Jan Haisma
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 12:41
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/012; H10D12/00; H10D12/211; H10D30/202; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/60; H10D64/64; H10P; H10P10/00; H10P10/12; H10P10/128; Y; Y10; Y10S; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
110 words
A method of manufacturing a semiconductor device, which method comprises providing first and second semiconductor bodies each having first and second major surfaces, defining a rectifying junction pattern adjacent to at least one of the first major surfaces, and bonding the first major surfaces together to join the two semiconductor bodies to form the semiconductor device in which the rectifying junction pattern defines a path for the flow of charge carriers between the second major surfaces, characterised by defining the rectifying junction pattern by defining at the one first major surface an electrically conductive pattern forming a Schottky junction with at least one of the first and second semiconductor bodies.
Claim 2
Independent Claim
110 words
A method of manufacturing a semiconductor device, which method comprises providing first and second semiconductor bodies each having first and second major surfaces, defining a rectifying junction pattern adjacent to at least one of the first major surfaces, and bonding the first major surfaces together to join the two semiconductor bodies to form the semiconductor device in which the rectifying junction pattern defines a path for the flow of charge carriers between the second major surfaces, characterised by defining the rectifying junction pattern by defining at the one first major surface an electrically conductive pattern forming a Schottky junction with at least one of the first and second semiconductor bodies.
Claim 3
Dependent Claim
34 words
A method according to Claim 1, further characterised by defining the electrically conductive pattern by forming one or more grooves in the one first major surface and providing electrically conductive material in the groove(s).
Claim 4
Dependent Claim
21 words
A method according to Claim 1 or 2, further characterised by defining the electrically conductive pattern as an electrically conductive grid.
Claim 5
Dependent Claim
64 words
A method according to Claim 1, 2 or 3, further characterised by providing the first and second semiconductor bodies of one conductivity type and by providing electrical contact to the electrically conductive pattern by forming a highly doped region of the opposite conductivity type extending through one of the first and second semiconductor bodies to form an ohmic contact with the electrically conductive pattern.
Claim 6
Independent Claim
59 words
A method according to any one of the preceding Claims, further characterised by providing each of the first and second semiconductor bodies as a relatively highly doped layer adjacent the second major surface and a relatively lowly doped layer of the same conductivity type adjacent the first major surface and providing electrically conductive contacts on the second major surfaces.
Claim 7
Independent Claim
63 words
A method according to any one of the preceding claims, further characterised by bonding the first major surfaces by mirror polishing the first major surfaces to form optically flat activated surfaces, bringing the polished surfaces into contact to establish bonding between the first major surfaces and subjecting the joined bodies to a heat treatment to strengthen the bond between the first major surfaces.
Claim 8
Independent Claim
62 words
A method according to any one of the preceding claims, further characterised by providing the first and second semiconductor bodies as silicon bodies and by forming the electrically conductive pattern by depositing a material selected from the group consisting of molybdenium silicide, tungsten silicide, titanium silicide, tungsten nitride, hafnium nitride and a composite comprising layers of tungsten, titanium nitride and titanium silicide.
Claim 9
Dependent Claim
102 words
A semiconductor device comprising first and second semiconductor bodies each having first and second major surfaces with a rectifying junction pattern being defined adjacent to at least one of the first major surfaces and the first major surfaces being joined to form the semiconductor device in which the rectifying junction pattern defines a path for the flow of charge carriers between the second major surfaces, characterised in that the rectifying junction pattern is provided by an electrically conductive pattern defined on the one first major surface and forming a Schottky junction with at least one of the first and second semiconductor bodies.
Claim 10
Dependent Claim
102 words
A semiconductor device comprising first and second semiconductor bodies each having first and second major surfaces with a rectifying junction pattern being defined adjacent to at least one of the first major surfaces and the first major surfaces being joined to form the semiconductor device in which the rectifying junction pattern defines a path for the flow of charge carriers between the second major surfaces, characterised in that the rectifying junction pattern is provided by an electrically conductive pattern defined on the one first major surface and forming a Schottky junction with at least one of the first and second semiconductor bodies.
Claim 11
Dependent Claim
35 words
A semiconductor device according to Claim 8, further characterised in that the electrically conductive pattern is formed by electrically conductive material provided in one or more grooves in the at least one first major surface.
Claim 12
Dependent Claim
22 words
A semiconductor device according to Claim 8 or 9, further characterised in that the electrically conductive pattern comprises an electrically conductive grid.
Claim 13
Dependent Claim
54 words
A semiconductor device according to Claim 8, 9 or 10, further characterised in that the first and second semiconductor bodies are of one conductivity type and a highly doped region of the opposite conductivity type extends through one of the first and second semiconductor bodies to make ohmic contact with the electrically conductive pattern.
Claim 14
Dependent Claim
65 words
A semiconductor device according to Claim 8, 9, 10 or 11, further characterised in that each of the first and second semiconductor bodies comprises a relatively highly doped layer adjacent the second major surface of the semiconductor body and a relatively lowly doped layer of the same conductivity type adjacent the first major surface, with electrically conductive contacts being provided on the second major surface.
Claim 15
Dependent Claim
61 words
A semiconductor device according to any one of claims 8 to 12, further characterised in that first and second semiconductor bodies are formed of silicon and the electrically conductive pattern comprises a material selected from the group consisting of molybdenium silicide, tungsten silicide, titanium silicide, tungsten nitride hafnium nitride and a composite comprising layers of tungsten, titanium nitride and titanium silicide.
References Cited (Backward Citations)
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