Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
208 words
A method of manufacturing a semiconductor device, comprising: an adhesion step of forming a laminated substrate by means of mirror polishing one surface each of a first and second semiconductor substrates (25, 27), and by bringing said two polished surfaces into contact and adhesing both substrates (25, 27); a rough grinding step of roughly grinding to a predetermined thickness of a substrate surface on the side of said both surfaces of said laminated substrate, on which a required semiconductor layer (30) is formed; an etching step of removing process distortion due to rough grinding of said substrate (25, 27) that has had the side of one surface roughly polished by said rough grinding step; and a mirror polishing step of mirror polishing a substrate surface on the side (25) of the formation of said required semiconductor layer (30) in said laminated substrate after the process distortion has been removed, and for the formation of said required semiconductor layer; and furthermore prior to at least said etching step, a dielectric layer formation step of forming a dielectric layer (29, 35b, 37, 39b) on another surface on the side (27) of said required semiconductor layer (30) formed in said laminated substrate, for protecting said other surface, during said etching step.
Claim 2
Dependent Claim
105 words
The method of manufacturing a semiconductor substrate according to claim 1, wherein said adhesion step comprises an oxidation step of forming another dielectric layer different from said dielectric layer (29, 35b, 37, 39b) by the oxidation of a contact surface of one substrate of said first and second semiconductor substrates (25, 27); a polishing step of mirror polishing both said surfaces of said another dielectric layer (26) and said other substrate of said two opposing substrates; and a thermal processing step of applying a contact temperature which surfaces of two substrates that have been mirror polished are in contact, and chemically adhering said surfaces completely.
Claim 3
Dependent Claim
39 words
The method of manufacturing a semiconductor substrate according to claim 2, wherein said thermal processing is performed by leaving said contacted substrate under temperature conditions within a range of 600-1200 degrees centigrade, and more desirably within 1000-1200 degrees centigrade.
Claim 4
Dependent Claim
42 words
The method of manufacturing a semiconductor substrate according to claim 2, wherein said substrate is manufactured by the order of said adhesion step, said dielectric layer formation step, said rough grinding step, said etching step and said mirror polishing step, in sequence.
Claim 5
Dependent Claim
56 words
The method of manufacturing a semiconductor substrate according to claim 4, wherein said dielectric layer formation step is performed continuously and simultaneously with said thermal processing step in said adhesion step, and said dielectric layer (35b) is formed to a required thickness at the same time as two substrates in contact are chemically and completely adhered.
Claim 6
Dependent Claim
48 words
The method of manufacturing a semiconductor substrate according to claim 1, wherein said dielectric layer formed on said other surface of said laminated substrate by said dielectric layer formation step, remains on at least said other surface while process distortion due to rough grinding is removed by etching.
Claim 7
Dependent Claim
42 words
The method of manufacturing a semiconductor substrate according to claim 1, wherein said substrate is manufactured by the order of said adhesion step, said dielectric layer formation step, said rough grinding step, said etching step, and said mirror polishing step, in sequence.
Claim 8
Dependent Claim
42 words
The method of manufacturing a semiconductor substrate according to claim 1, wherein said substrate is manufactured by the order of said adhesion step, said rough grinding step, said dielectric layer formation step, said etching step, and said mirror polishing step, in sequence.