EP0486318A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device for use in a light valve device, and process for manufacturing the same
Assignee: Seiko Instruments Inc
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Filing: 1991-11-15
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Granted: —
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Expires: 2011-11-15
Abstract
Abstract The present invention provides a semiconductor device for use in a light valve (e.g. in an LCD display) and a process for producing the same. The semiconductor device has a support layer (14,15) with transistor elements (5-7) provided thereon. The semiconductor device is characterised by a thin film layer (1) including a surface insulating film (3), a single crystal semi- conductor thin film (4) disposed below said surface insulating film and having a source region (6), a drain region (7) and a channel forming region (5) for constituting each said transistor element, an insulating film (8) disposed on the side of the single crystal semiconductor thin film opposed to said surface insulating film for providing a gate insulator, an electrode film (9) disposed on the side of the insulating film opposed to said single crystal semiconductor thin film for providing a gate electrode of each said transistor element, and a back insulating film (10) disposed at least over the electrode film on the side thereof opposed to said insulating film, said support layer being fixedly adhered in face to face relation with said back insulating film. The process for manufacturing the device comprises a first step of forming an SOI substrate having a single crystal semiconductor thin film (22; Fig. 15) laminated on a tentative substrate (20) through an insulating film (21); a second step of forming a semiconductor integrated circuit for said single crystal semiconductor thin film ; a third step of adhering a support substrate (24,25) fixedly in face to face relation with the surface of the semiconductor integrated circuit opposite the side of the tentative substrate ; a fourth step of removing the tentative substrate to expose the insulating film (21) to the outside ; and a fifth step of subjecting exposed surface of the insulating film to a treatment including at least the forming of an electrode.
Inventors
- 👤 Kunihiro Takahashi
- 👤 Yoshikazu Kojima
- 👤 Hiroaki Takasu
- 👤 Nobuyoshi Matsuyama
- 👤 Hitoshi Niwa
- 👤 Tomoyuki Yoshino
- 👤 Tsuneo Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 21:43
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0214; H10D30/00; H10D30/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/67; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734; H10D86/40; H10D86/60; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; G02F1/1335; G02F1/133509; G02F1/133512; G02F1/136; G02F1/13613; G02F2202/00; G02F2202/10; G02F2202/105; H10P72/00; H10P72/70; H10P72/74; H10P72/7432; H10W10/021; H10W10/20; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
156 words
A semiconductor device having a support layer (2) with transistor elements (5-7) provided thereon, characterised by a thin film layer (1) including a surface insulating film (3), a single crystal semiconductor thin film (4) disposed below said surface insulating film and having a source region (6), a drain region (7) and a channel forming region (5) for constituting each said transistor element, an insulating film (8) disposed on the side of the single crystal semiconductor thin film opposed to said surface insulating film for providing a gate insulator, an electrode film (9) disposed on the side of the insulating film opposed to said single crystal semiconductor thin film for providing a gate electrode of each said transistor element, and a back insulating film (10) disposed at least over the electrode film on the side thereof opposed to said insulating film, said support layer being fixedly adhered in face to face relation with said back insulating film.
Claim 2
Dependent Claim
156 words
A semiconductor device having a support layer (2) with transistor elements (5-7) provided thereon, characterised by a thin film layer (1) including a surface insulating film (3), a single crystal semiconductor thin film (4) disposed below said surface insulating film and having a source region (6), a drain region (7) and a channel forming region (5) for constituting each said transistor element, an insulating film (8) disposed on the side of the single crystal semiconductor thin film opposed to said surface insulating film for providing a gate insulator, an electrode film (9) disposed on the side of the insulating film opposed to said single crystal semiconductor thin film for providing a gate electrode of each said transistor element, and a back insulating film (10) disposed at least over the electrode film on the side thereof opposed to said insulating film, said support layer being fixedly adhered in face to face relation with said back insulating film.
Claim 3
Dependent Claim
22 words
A semiconductor device according to claim 1 characterised in that said support layer comprises a single layer (42) of an adhesive material.
Claim 4
Dependent Claim
40 words
A semiconductor device according to claim 1 or 2 characterised in that each said transistor element is connected by way of a through hole (16,32) in the surface insulating film with an electrode (17,31) formed over the surface insulating film.
Claim 5
Dependent Claim
34 words
A semiconductor device according to claim 1, or 3 characterised by an additional gate electrode (18) formed over the surface insulating film in alignment with the channel forming region of each said transistor element.
Claim 6
Dependent Claim
41 words
A semiconductor device according to any preceding claim characterised by a light shielding film (20) arranged so as to cover at least the channel forming region of each said transistor element for preventing optical leakage current in the channel forming region.
Claim 7
Dependent Claim
38 words
A semiconductor device according to any preceding claim characterised by a capacitor electrode (19) formed over the surface insulating film in opposition to the drain region of each said transistor element so as to provide a capacitor element.
Claim 8
Dependent Claim
122 words
A process for manufacturing a semiconductor device characterised by a first step of forming an SOI substrate having a single crystal semiconductor thin film (22) laminated on a tentative substrate (20) through an insulating film (21); a second step of forming a semiconductor integrated circuit for said single crystal semiconductor thin film; a third step of adhering a support substrate (24,25) fixedly in face to face relation with the surface of the semiconductor integrated circuit opposite the side of the tentative substrate; a fourth step of removing the tentative substrate to expose the insulating film to the outside; and a fifth step of subjecting the exposed surface of the insulating film to a treatment including at least the forming of an electrode.
Claim 9
Dependent Claim
122 words
A process for manufacturing a semiconductor device characterised by a first step of forming an SOI substrate having a single crystal semiconductor thin film (22) laminated on a tentative substrate (20) through an insulating film (21); a second step of forming a semiconductor integrated circuit for said single crystal semiconductor thin film; a third step of adhering a support substrate (24,25) fixedly in face to face relation with the surface of the semiconductor integrated circuit opposite the side of the tentative substrate; a fourth step of removing the tentative substrate to expose the insulating film to the outside; and a fifth step of subjecting the exposed surface of the insulating film to a treatment including at least the forming of an electrode.
Claim 10
Dependent Claim
50 words
A process according to claim 7 characterised in that the first step of forming the SOI substrate includes thermally bonding a semiconductor substrate of single crystal silicon to the tentative substrate through the insulating film, and polishing the semiconductor substrate to form a thin film of the single crystal silicon.
Claim 11
Dependent Claim
48 words
A process according to claim 7 or 8 characterised in that the first step of forming the SOI substrate includes depositing a silicon nitride layer as a surface treatment on the tentative substrate, and depositing a silicon dioxide layer by chemical vapour deposition to form the insulating film.
Claim 12
Dependent Claim
36 words
A process according to claim 7, 8 or 9 characterised in that the third step of adhering the support substrate includes releasing gas generated from the adhesive by way of through holes in the support substrate.
Claim 13
Dependent Claim
138 words
A light valve device comprising a drive substrate having drive electrodes (113) and drive circuits (114) for exciting said drive electrodes in response to predetermined signals; an opposed substrate (128) arranged opposite to said drive substrate; and an electro-optical material layer (127) arranged between said drive substrate and said opposed substrate,characterised in that said drive substrate includes a transparent insulating film layer (111) and a single crystal semi-conductor thin film (112) formed over said transparent insulating thin film layer, said drive circuits include transistor elements (114) formed in said transparent insulating thin film layer, and said drive electrodes are integrally arranged on said single crystal thin film layer and electrically connected with said drive circuits whereby they are excitable by said drive circuits to act upon said electro-optical material layer for controlling the optical transparency of the same.
Claim 14
Dependent Claim
138 words
A light valve device comprising a drive substrate having drive electrodes (113) and drive circuits (114) for exciting said drive electrodes in response to predetermined signals; an opposed substrate (128) arranged opposite to said drive substrate; and an electro-optical material layer (127) arranged between said drive substrate and said opposed substrate,characterised in that said drive substrate includes a transparent insulating film layer (111) and a single crystal semi-conductor thin film (112) formed over said transparent insulating thin film layer, said drive circuits include transistor elements (114) formed in said transparent insulating thin film layer, and said drive electrodes are integrally arranged on said single crystal thin film layer and electrically connected with said drive circuits whereby they are excitable by said drive circuits to act upon said electro-optical material layer for controlling the optical transparency of the same.
Claim 15
Dependent Claim
275 words
A process for manufacturing a light valve device having a semiconductor substrate, characterised by a first step of preparing a three layer substrate, in which a temporary substrate (151) and a single crystal semi-conductor thin film layer (112) are laminated through a transparent insulating thin film layer (111); a second step of forming pixel electrodes (113) in portions of said three layer substrate from which the single crystal semiconductor thin film layer is selectively removed, and forming said single crystal semiconductor thin film layer with drive circuits composed of switch elements (114) and driver circuits (131,132) for supplying signals selectively to said switch elements; a third step of adhering a carrier substrate (122,123) on the surface of said three layer substrate which is formed with said pixel electrodes and said drive circuits; a fourth step of removing said temporary substrate to expose said transparent insulating thin film layer; a fifth step of forming through holes in predetermined locations in said exposed transparent insulating thin film layer and forming a metal film (152) on the exposed surface of said transparent insulating thin film layer; a sixth step of removing said metal film to form a light shielding layer for covering at least a portion of said drive circuits and forming an electrode pad connected with said drive circuits by way of :aid through holes to form said semiconductor substrate; and a seventh step of laminating and adhering the surface of said semiconductor substrate formed with said light shielding layer and an opposed substrate formed with a transparent electrode so as to leave a gap between said substrates and filling up said gap with an electro-optical material.
Claim 16
Dependent Claim
275 words
A process for manufacturing a light valve device having a semiconductor substrate, characterised by a first step of preparing a three layer substrate, in which a temporary substrate (151) and a single crystal semi-conductor thin film layer (112) are laminated through a transparent insulating thin film layer (111); a second step of forming pixel electrodes (113) in portions of said three layer substrate from which the single crystal semiconductor thin film layer is selectively removed, and forming said single crystal semiconductor thin film layer with drive circuits composed of switch elements (114) and driver circuits (131,132) for supplying signals selectively to said switch elements; a third step of adhering a carrier substrate (122,123) on the surface of said three layer substrate which is formed with said pixel electrodes and said drive circuits; a fourth step of removing said temporary substrate to expose said transparent insulating thin film layer; a fifth step of forming through holes in predetermined locations in said exposed transparent insulating thin film layer and forming a metal film (152) on the exposed surface of said transparent insulating thin film layer; a sixth step of removing said metal film to form a light shielding layer for covering at least a portion of said drive circuits and forming an electrode pad connected with said drive circuits by way of :aid through holes to form said semiconductor substrate; and a seventh step of laminating and adhering the surface of said semiconductor substrate formed with said light shielding layer and an opposed substrate formed with a transparent electrode so as to leave a gap between said substrates and filling up said gap with an electro-optical material.
Claim 17
Dependent Claim
223 words
An image projection system comprising a light source (234); a light valve device (231-233) for guiding light coming from said light source, said light valve device comprising a drive substrate having drive electrodes and drive circuits for exciting said drive electrodes in response to predetermined signals, an opposed substrate arranged opposite to said drive substrate, and an electro-optical substance layer arranged between said drive substrate and said opposed substrate; and an optical lens (C1-C3) for magnifying and projecting an image on said light valve device; characterised in that said drive substrate of said light valve device includes a transparent insulating thin film layer, a single crystal semiconductor thin film layer formed over said transparent insulating thin film layer, and a light shielding layer formed at that surface of said transparent insulating thin film layer which is opposed to the side of said single crystal semiconductor thin film layer, said drive circuit includes transistor elements formed in said transparent insulating thin film layer, said light shielding layer is formed to cover the active portions of said transistor elements, and said drive electrodes are integrally arranged on said single crystal thin film layer and electrically connected with said drive circuits so that they are excited by said drive circuits to act upon said electro-optical substance layer whereby to control the optical transparency of the same.
Claim 18
Dependent Claim
223 words
An image projection system comprising a light source (234); a light valve device (231-233) for guiding light coming from said light source, said light valve device comprising a drive substrate having drive electrodes and drive circuits for exciting said drive electrodes in response to predetermined signals, an opposed substrate arranged opposite to said drive substrate, and an electro-optical substance layer arranged between said drive substrate and said opposed substrate; and an optical lens (C1-C3) for magnifying and projecting an image on said light valve device; characterised in that said drive substrate of said light valve device includes a transparent insulating thin film layer, a single crystal semiconductor thin film layer formed over said transparent insulating thin film layer, and a light shielding layer formed at that surface of said transparent insulating thin film layer which is opposed to the side of said single crystal semiconductor thin film layer, said drive circuit includes transistor elements formed in said transparent insulating thin film layer, said light shielding layer is formed to cover the active portions of said transistor elements, and said drive electrodes are integrally arranged on said single crystal thin film layer and electrically connected with said drive circuits so that they are excited by said drive circuits to act upon said electro-optical substance layer whereby to control the optical transparency of the same.
References Cited (Backward Citations)
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