← Back to Patent Explorer
EP0595053A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Anisotropic liquid phase photochemical etch method

Assignee: Texas Instruments Inc
•
Filing: 1993-09-30
•
Granted: —
•
Expires: 2013-09-30
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract An anisotropic liquid phase photochemical etch is performed by a substrate 30 (e.g. copper) in a liquid 34 containing all etchant (e.g. hydrochloric acid) and a passivant (e.g. iodine), the passivant forming an insoluble passivation layer 36 (e.g. CuI) on the surface, preventing the etchant from etching the surface. The passivant and its concentration are chosen such that the passivation layer 36 has a solubility which is substantially increased when it is illuminated with radiation 38 (e.g. visible/ultraviolet light). Portions of the surface are then illuminated with radiation 88, whereby the passivation layer 36 is removed from these illuminated portions of the surface, allowing the etch to proceed there. Portions of the surface not illuminated are not etched, resulting in an anisotropic etch. Preferably, an etch mask 32 is used to create the inilluminated areas. This etch mask 32 may be formed on the surface or it may be interposed between the surface and the radiation source.

Inventors

  • 👤 Monte A. Douglas

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-02 17:24
CPC Classifications
C; C23; C23F; C23F1/00; C23F1/02; H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/244; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P50/71

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 75 words
An anisotropic etch method comprising: submersing a surface of a substrate in a liquid, said liquid including at least one etching agent; adding a passivation agent to said liquid, said passivation agent fbrming a passivation layer on said surface and being substantially insoluble in said liquid; and irradiating portions of said surface with radiation to produce irradiated areas and substantially non-irradiated areas, thereby causing the passivation layer to be substantially removed from said irradiated areas.
Claim 2
Dependent Claim 25 words
The method according to Claim 1, wherein said step of adding passivation agent comprises adding the agent to said liquid before said surface if submersed
Claim 3
Dependent Claim 23 words
The method according to Claim 1 or Claim 2, wherein the etching occurs at a rate which is substantially unchanged by said irradiation.
Claim 4
Independent Claim 19 words
The method according to any preceding Claim, further comprising causing said liquid to flow with respect to said surface.
Claim 5
Independent Claim 17 words
The method according to any preceding Claim, further comprising modulating the intensity of said radiation with time.
Claim 6
Independent Claim 27 words
The method according to any preceding Claim, further comprising changing the intensity of said radiation such that it is not equal at all points on said surface.
Claim 7
Independent Claim 20 words
The method according to any preceding Claim, further comprising maintaining the temperature of said liquid to be approximately 25 °C.
Claim 8
Independent Claim 15 words
The method according to any preceding Claim, further comprising irradiating said surface with monochromatic radiation.
Claim 9
Independent Claim 15 words
The method according to any preceding Claim, further comprising providing said etching agent as H₂O.
Claim 10
Independent Claim 39 words
The method according to any of Claims 1 to 8, further comprising providing said surface as copper; said etching agent as hydrochloric acid in 0.1 % molar concentration; and said passivation agent as iodine in 0.019 % molar concentration.
Claim 11
Dependent Claim 37 words
The method of Claim 10, further comprising: submersing said copper in the 0.1 % molar hydrochloric acid containing the 0.019 % molar iodine; and illuminating said copper with visible/ultraviolet radiation produced by a 200 Watt mercury/xenon lamp.
Claim 12
Dependent Claim 16 words
The method according to Claim 11, further comprising providing said copper on a crystalline silicon substrate.
Claim 13
Dependent Claim 23 words
The method of Claim 9, further comprising submersing said surface in an aqueous solution, said aqueous solution including at least one said etchant.
Claim 14
Independent Claim 17 words
The method according to Claim is, further comprising providing said aqueous solution having greater than 90% H₂O.
Claim 15
Dependent Claim 11 words
An integrated circuit fabricated by the method of any preceding Claim.

References Cited (Backward Citations)

US3637381A Cited

USPTO Annuity & Maintenance Windows

Maintenance schedule is calculated for granted US utility patents.

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag