EP0605980A2
Expired / Lapsed
EP
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Method for depositing silicon nitride and silicon oxynitride films
Assignee: Ramtron International Corp
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Filing: 1993-12-17
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Granted: —
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Expires: 2013-12-17
Abstract
Abstract A method of depositing silicon nitride and silicon oxynitride films reacts tetraethoxysilane (TEOS) with nitrogen in a parallel plate chemical vapor deposition system. A high frequency power signal having a frequency of 13.56 MHz is applied to the upper plate (14) and the low frequency power signal having a frequency in the range of 100-400 KHz is applied to the lower plate (12). The degree of nitridization of the resulting film can be varied by adjusting the amount of power applied to the upper and lower plates.
Inventors
- 👤 George C/O Ramtron International Corp. Argos Jr.
- 👤 Divyesh N. C/O Ramtron International Corp. Patel
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 00:24
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/308; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; C23C16/34; C23C16/345; C23C16/44; C23C16/50; C23C16/517; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
66 words
A method of depositing a silicon nitride film in a parallel plate chemical vapor deposition system having an upper (14) and lower plate (12) characterized by the steps of positioning a wafer between the upper and lower plates; applying power to at least one of said plates; and reacting tetraethoxysilane with nitrogen between said plates to form silicon nitride having a predetermined nitrogen and oxygen content.
Claim 2
Dependent Claim
25 words
The method of depositing a silicon nitride film of Claim 1 further characterized by the step of annealing the film after reacting tetraethoxysilane with nitrogen.
Claim 3
Dependent Claim
28 words
The method of depositing a silicon nitride film of Claim 2 further characterized by the step of annealing the film is performed in an N₂ environment at 1100°C.
Claim 4
Dependent Claim
39 words
The method of depositing a silicon nitride film of Claim 1 further characterized by a high frequency power signal being applied to the upper plate (14) and a low frequency power signal being applied to the lower plate (12).
Claim 5
Dependent Claim
37 words
The method of depositing a silicon nitride film of Claim 4 further characterized by the high frequency power signal having a frequency of 13.56 MHz and the low frequency power signal having a frequency of 100-400 KHz.
Claim 6
Dependent Claim
22 words
The method of depositing a silicon nitride film of Claim 1 further characterized by the lower plate (12) being maintained at 400°C.
Claim 7
Dependent Claim
44 words
The method of depositing a silicon nitride film of Claim 1 further characterized by the flow of tetraethoxysilane being at a rate of 1.8 sccm and the flow of nitrogen being at a rate of 5000 sccm through the upper plate in the system.
Claim 8
Dependent Claim
29 words
The method of depositing a silicon nitride film of Claim 1 further characterised by the pressure in the chemical vapor deposition system being maintained between 2.0 and 4.2 Torr.
Claim 9
Independent Claim
11 words
A method of forming a film by reacting tetra-alkoxysilane with nitrogen.
Claim 10
Dependent Claim
13 words
A semiconductor device having a silicon(oxy)nitride layer formed by reacting tetra-alkoxysilane with nitrogen.
Claim 11
Dependent Claim
13 words
A ferroelectric memory having a passivation layer formed by reacting tetra-alkoxysilane with nitrogen.
References Cited (Backward Citations)
No citation records indexed.
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