EP0712156A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Process for producing multilevel metallization in an integrated circuit
Assignee: AT&T Inc
•
Filing: 1995-11-01
•
Granted: —
•
Expires: 2015-11-01
Abstract
Abstract A method for fabricating a multi-level integrated circuit is disclosed which utilizes a grid pattern from which portions corresponding to the metal layer are selectively removed to form a mask which is subsequently used to deposit dummy features in the open areas between metal lines, thereby to allow the deposition of a substantially planar dielectric surface over the metal layers and dummy features.
Inventors
- 👤 Kuo-Hua Lee
- 👤 Ruichen Liu
- 👤 Chun-Ting Liu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 00:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/071; Y; Y10; Y10S; Y10S438/00; Y10S438/942
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
112 words
In a method of fabricating an integrated circuit in which a plurality of patterns of conducting material are selectively formed on vertically spaced dielectric layers, said method comprising the steps of forming an opaque pattern over a transparent base, selectively removing portions of said opaque pattern to form a transparent region corresponding to a pattern of conducting material that is to be formed, and thereafter employing said thus modified opaque and transparent patterns as a mask to deposit dummy features corresponding to the locations of the remaining opaque pattern of said mask in the open areas of said dielectric layer intermediate the locations at which said conducting material is to be deposited.
Claim 2
Dependent Claim
17 words
The method of claim 1, in which said opaque pattern is in the form of a grid.
Claim 3
Dependent Claim
53 words
The method of claim 2, further comprising the step of forming a second opaque pattern corresponding to the pattern of the conducting material in the region from which said first opaque pattern material is removed, whereby the conducting material and dummy features can be deposited on the dielectric layer in a single deposition.
Claim 4
Dependent Claim
28 words
The method of claim 3, further comprising the step of depositing a second dielectric layer of substantially uniform height over said previously deposited conducting material and dummy features.
Claim 5
Dependent Claim
22 words
The method of claim 4, in which said dummy features are of substantially the same height and spacing as the conducting material.
Claim 6
Dependent Claim
53 words
The method of claim 1, further comprising the step of forming a second opaque pattern corresponding to the pattern of the conducting material in the region from which said first opaque pattern material is removed, whereby the conducting material and dummy features can be deposited on the dielectric layer in a single deposition.
Claim 7
Dependent Claim
26 words
The method of claim 6, further comprising the step of depositing a second dielectric layer of substantially uniform height over the metal line and dummy features.
Claim 8
Dependent Claim
22 words
The method of claim 7, in which said dummy features are of substantially the same height and spacing as the conducting material.
Claim 9
Dependent Claim
28 words
The method of claim 1, further comprising the step of depositing a second dielectric layer of substantially uniform height over said previously deposited conducting material and dummy features.
Claim 10
Dependent Claim
22 words
The method of claim 9, in which said dummy features are of substantially the same height and spacing as the conducting material.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.