EP0731503A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor cavity filling process
Assignee: Texas Instruments Inc
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Filing: 1995-12-12
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Granted: —
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Expires: 2015-12-12
Abstract
Abstract An improved process is provided which allows for enhanced filling of contacts, vias (600 and trenches (80) that are formed in dielectrics (62) of integrated circuits, particularly sub-0.5 µm technologies. In a preferred aspect of the invention, filling proceeds at a temperature of about 250 -450 in a vacuum of about 10 -6 - 10 -8 TORR and a processing pressure of about 300 - 1,000 atmospheres. The process of the present invention is applicable for different metals and metal alloys, adjustments to the processing parameters being undertaken in accordance with the various chemical and physical properties of the material to be filled in the respective contacts, vias (60) or trenches (80).
Inventors
- 👤 Girish A. Dixit
- 👤 Robert H. Havemann
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 23:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/059
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
109 words
A process for filling a semiconductor aperture, comprising the stepS of: providing a semiconductor body having a surface and at least one aperture which extends at least partially into said body and away from said surface, said aperture having an open end; applying a metal to said aperture open end; heating said wafer to a temperature of between about 250 o C and about 450 o C; and applying pressure to said metal to deform said metal and to direct said metal into said aperture to substantially fill said aperture with said metal while said semiconductor body is maintained at a temperature of between about 250°C and about 450°C.
Claim 2
Dependent Claim
20 words
The process according to claim 1, wherein said pressure is applied in the rang of about 300 - 1,000 atmospheres.
Claim 3
Dependent Claim
23 words
The process according to claim 1, wherein said metal is applied in a vacuum of between about 10 -6 and 10 -8 Torr.
Claim 4
Dependent Claim
96 words
The process according to claim1, wherein said metal is slected from a group consisting essentially of one or more of the following compositions: (1) Al-Ti (0.1%) - Cu (0.5%); (2) Al - Cu (0.5%); (3) Al - Cu (1%); (4) Al - Si (1%) - Cu (0.5%); (5) Aluminum; (6) Copper; (7) alloys of Cu with one or more of the follwing metals: (I) Mg, (ii) Au, and (iii) Ag; (8) Al - Sc - Cu; (9) Ti; (10) TiN; and (11) combinations of Ti with one or more of the following: TiN, TiW and W.
Claim 5
Dependent Claim
19 words
The process according to claim 1, wherein said aperture is formed in a semiconductor body having a polymeric insulator.
Claim 6
Dependent Claim
38 words
The process according to claim 5, wherein said polymeric insulator consists essentially of any one or more of the family of polytetrafluoroethylene (''PTFE'') compounds; polymeric spin-on-glass (''SOG'') compounds; parylene; polyimides; hydrongen silsesquioxane; and aerogels and surface modified aerogels.
Claim 7
Dependent Claim
33 words
The process according to claim 6, wherein said polymeric insulator is configured as a stack having at least two discrete levels, said levels consisting essentially of different ones of said recited polymeric insulators.
Claim 8
Dependent Claim
28 words
The process according to claim 5, wherein said aperture provided with a metal liner that is applied aby one of a chemical vapor or physical vapor deposition process.
Claim 9
Dependent Claim
34 words
The process according to claim 8, wherein said aperture is inthe form of a via so as to extend from an upper level of metal through a dielectric to a lower level of metal.
Claim 10
Dependent Claim
16 words
The process according to claim 1, wherein said aperture is in the form of a trench.
Claim 11
Dependent Claim
27 words
The process according to claim 1, further comprising the step of applying a metal liner in said aperture prior to the application of metal to said aperture.
Claim 12
Dependent Claim
25 words
The process according to claim 1, further comprising the step of outgassing contaminants from said aperture prior to the application of metal to said aperture.
Claim 13
Dependent Claim
27 words
The process according to claim 1, furhter comprising the step of applying a dielectric liner to said aperture prior to the application of metal to said aperture.
Claim 14
Dependent Claim
25 words
The process according to claim 1, wherein said pressure is applied while said semiconductor body surface is exposed to an atmosphere containing an inert element.
Claim 15
Dependent Claim
36 words
The process according to claim 1, wherein said aperture is formed in a dielectric material and is provided with a metal liner that is applied by one of a chenical vapor or physical vapor deposition process.
Claim 16
Dependent Claim
18 words
The process according to claim 1, wherein said aperture is formed in the absence of an oxide sidewall.
Claim 17
Dependent Claim
34 words
The process according to claim 1, further comprising the step of positioning said semiconductor body in a pressurizeable chamber and applying fluid pressure to said applied metal to drive said metal into said aperture.
Claim 18
Dependent Claim
16 words
A Process according to any preceding claim wherein the aperture is a trench or a via.
Claim 19
Dependent Claim
17 words
A process according to claim 5 and wherein said innsulator extends at least partially into said aperture.
Claim 20
Dependent Claim
18 words
A process according to claim 13 and wherein said dielectric extends a t least partially into said aperture.
Claim 21
Dependent Claim
14 words
A silicon body having a aperture filled by the method of any preceding claim.
Claim 22
Dependent Claim
12 words
An integrated circuit including a silicon body as claimed in claim 21.
References Cited (Backward Citations)
US5108951A
Cited
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