EP0881668A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Deposition of an electrically insulating thin film with a low dielectric constant
Assignee: DuPont Toray Specialty Materials KK
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Filing: 1998-05-27
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Granted: —
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Expires: 2018-05-27
Abstract
Abstract This invention pertains to a method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and then exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes dedensification of the film during cure of the resin. This results in a film having a dielectric constant of below 2.7. This invention also pertains to a semiconductor device having an interconnect structure comprising at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method of this invention. <IMAGE>
Inventors
- 👤 Akihiko Kobayashi
- 👤 Katsutoshi Mine
- 👤 Takashi Nakamura
- 👤 Motoshi Sasaki
- 👤 Kiyotaka Sawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 11:13
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6925; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6536; H10P14/6539; H10P14/68; H10P14/683; H10P14/687; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/093; H10W20/095; H10W20/097; H10W20/40; H10W20/45; H10W20/47; H10W20/48; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/665; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
135 words
A method for forming electrically insulating thin films wherein the method
comprises: (1) Coating the surface of a substrate with a composition comprising: (A) a resin selected from electrically insulating, heat-curing organic resins or
electrically insulating, heat-curing inorganic resins, (B) a first solvent capable of dissolving resin (A), and (C) a second solvent selected from the group consisting of a solvent whose boiling
point differs from solvent (B), a solvent whose vapor pressure curve differs
from that of solvent (B) and a solvent whose affinity for resin (A) differs from
that of solvent (B), (2) evaporating at least a portion of the solvents (B) and (C); and (3) subsequently exposing the coated substrate to high energy radiation and inducing
evaporation of the remaining solvents during the course of or after the cure of resin (A).
Claim 2
Independent Claim
124 words
A method for forming electrically insulating thin films wherein the method
comprises coating the surface of a substrate with a composition comprising (A) a resin selected from the group consisting of electrically insulating, heat-curing
organic resins and electrically insulating, heat-curing inorganic resins;
and (B) a solvent capable of dissolving the resin (A); and (D) at least one solvent-soluble substance selected from (i) substances that upon heating at a temperature of from 0°C to 800°C
generate a gas or; (ii) substances that by interaction with resin (A) generate a gas;
evaporating the solvent (B); and subsequently exposing the substrate to high energy
radiation and inducing the generation of gas from the substance (D) during the course of
or after the cure of the resin (A).
Claim 3
Independent Claim
16 words
The method as claimed in claims 1 or 2 wherein the substrate is an electronic
device.
Claim 4
Independent Claim
20 words
The method as claimed in claims 1 or 2 wherein the coating of the surface is
performed by spin coating.
Claim 5
Independent Claim
18 words
The method as claimed in claims 1 or 2 wherein the high energy radiation is an
electron beam.
Claim 6
Independent Claim
16 words
The method as claimed in claims 1 or 2 wherein resin (A) is hydrogen
silsesquioxane resin.
Claim 7
Independent Claim
32 words
The method as claimed in claims 1 or 2 wherein solvent (B) is selected from
the group consisting of aromatic solvents; aliphatic solvents; ketone solvents; aliphatic
ester solvents; silicone solvents; and silanes.
Claim 8
Dependent Claim
50 words
The method as claimed in claim 1 wherein solvent (C) is selected from the
group consisting of hydrocarbon solvents; ketone solvents; aldehyde solvents; ester
solvents; diethyl sulfate; sulfolane; halohydrocarbon solvents; etherified hydrocarbon
solvents; alcohol solvents; ether solvents, acetal solvents; polyhydric alcohol solvents;
carboxylic anhydride solvents; phenolic solvents; and silicone solvents.
Claim 9
Dependent Claim
19 words
The method as claimed in claim 2 wherein component (D) is selected from an
organic peroxide or an amine.
Claim 10
Dependent Claim
39 words
A semiconductor device having an interconnect structure comprising at least
one electrically conductive layer with an interposed insulating layer having a dielectric
constant of less than 2.7 wherein the insulating layer is produced by the method of claim
1.
Claim 11
Dependent Claim
39 words
A semiconductor device having an interconnect structure comprising at least
one electrically conductive layer with an interposed insulating layer having a dielectric
constant of less than 2.7 wherein the insulating layer is produced by the method of claim
2.
References Cited (Backward Citations)
No citation records indexed.
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