Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a shallow impurity region, and enable sufficient activation of impurity by a method wherein heat treatment at a high temperature is simultaneously performed in the state that base impurity is uniformly diffused in a polycrystalline silicon layer, and emitter impurity of high concentration is implanted as far as an intermediate part of the Iayer. CONSTITUTION:An insulating layer 2 and a polycrystalline silicon layer 3 are formed on a substrate 1; base impurity 4, e.g., boron, is uniformly diffused in the depth direction of the layer 3; emitter impurity 6, e.g., arsenic, is implanted as far as the midway from the layer 3 surface, and the concentration is made higher than the boron; annealing is executed en bloc in a nitrogen atmosphere: then the diffusion of boron is restrained because of field effect generated at the time of diffusion of the high concentration aresenic, so that a shallow P-type base region 5 is formed in the substrate 1 side. In addition, a shallow N-type emitter region 7 is formed in the region 5, so that the base width can be narrowed. Further, diffusion layers can be simultaneously annealed at a high temperature, so that the sufficient activation of the emitter impurity is enabled.

Inventors

• 👤 Takayuki Gomi
• 👤 五味　孝行
• 👤 Hiromi Sasaki
• 👤 博美 佐々木

Bibliographic Details