Microwave plasma treatment device

Abstract

Abstract PURPOSE:To uniformly process a wafer having a large diameter by providing a plurality of microwave waveguides disposed relatively to a central position planely in parallel with a substrate to be treated from the side of a plasma generation chamber, disposing a magnet in a microwave inlet, and simultaneously irradiating them with microwaves. CONSTITUTION:4 microwave waveguides disposed relatively to a central position in a two-dimensional manner are provided in parallel with a substrate to be treated from the side of a polygonal plasma generating chamber 30 to the microwave generating chamber 30, and ringlike magnets M3-M6 are fitted to the inlets of the waveguides. Since magnetic field gradients (Miller magnetic field) are laterally generated from the four waveguides toward the center of the chamber 30 and longitudinally generated, even if the waveguides are laterally disposed, a wafer can be etched. Thus, the uniform magnetic field of large capacity is formed, and a wafer having a large diameter can be etched or grown uniformly and accurately in dimension.

Inventors

• 👤 Satoshi Mihara
• 👤 智 三原

Bibliographic Details