Semiconductor device

Abstract

Abstract PURPOSE:To stabilize element characteristics and to accelerate a speed by implanting impurity, so emitting an energy beam that it becomes substantially parallel in a beam scanning direction and a current direction, and providing a polysilicon film resistor to be so formed as to have positive temperature coefficient. CONSTITUTION:A polysilicon film 11b in which the scanning directions A1, A2 of an energy beam 12 are parallel to a current direction B2 is formed of a resistor having a positive temperature coefficient, and a polysilicon film 11a in which the scanning directions A1, A2 of the beam 12 are perpendicular to a current direction B1 is formed of a resist having a negative temperature coefficient. The film 11a having the negative temperature coefficient and the film 11b having the positive temperature coefficient are electrically connected in series to obtain a resistor having small temperature dependency. Thus, element characteristics can be stabilized, a junction capacity is reduced, and its speed can be increased.

Inventors

• 👤 Kazuo Sukegawa
• 👤 助川　和雄

Bibliographic Details