JPS5261976A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor integrated circuit device and its production
Assignee: Panasonic Holdings Corp
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Filing: 1975-11-18
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Granted: —
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Expires: 1995-11-18
Abstract
Abstract PURPOSE:To increase electron injection efficiency and increase the hFE of an I<2>L by reducing the distance between the buried layer of the I<2>L and the base layer of the vertical transistor on the I<2>L through the use of the raise of a buried layer forming impurity, in an IC circuit including the I<2>L and bipolar transistor.
Inventors
- 👤 Haruyasu Yamada
- 👤 Toyoki Takemoto
- 👤 Atsushi Shibata
- 👤 Tsutomu Fujita
- 👤 Toshiki Mori
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-09 13:22
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/65; H10D84/658
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