JPS5263684A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Non-volatile semiconductor memory device
Assignee: Toshiba Corp
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Filing: 1975-11-20
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Granted: —
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Expires: 1995-11-20
Abstract
Abstract PURPOSE:A transistor having memory and address selecting gate is obtained by providing a control gate at a part of regions via first gate insulating film on the surfcce of channel regions and further providing a floating gate extended to the portions not covered with the control gate via second gate insulating film thereon.
Inventors
- 👤 Hisakazu Iizuka
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-28 01:08
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681
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