JPS5362985A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Mis type field effect transistor and its production
Assignee: Toshiba Corp
•
Filing: 1976-11-18
•
Granted: —
•
Expires: 1996-11-18
Abstract
Abstract PURPOSE: To increase the scale of integration without being affected by short channel effect by forming source, drain on the substrate surface on both sides, with the protruding part provided to the substrate in-between. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Masayuki Ishibashi
- 👤 Tsuneo Morita
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-08 21:45
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D62/00; H10D62/10; H10D62/117; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/143
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.