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JPS5616136A Expired / Lapsed JP ⏱️ 0.0 years remaining

Production of transfer mask for x-ray

Assignee: Mitsubishi Electric Corp
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Filing: 1979-07-17
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Granted: —
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Expires: 1999-07-17
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Abstract

Abstract PURPOSE:To increase mechanical strength of a soft X-ray absorbing layer and a soft X-ray transmitting layer to prevent damage dependent upon physical contact surely, by injecting ions after the soft X-ray absorbing layer pattern is formed on the soft X- ray transmitting layer or is patterned. CONSTITUTION:Epitaxial layer 2 of the B density of>=7X10 <19> atom/cm<3> is grown on the upper face of silicon substrate 4. Next, the reverse face of substrate 4 is subjected to thermal oxidation to form pattern 5 of an SiO2 film. Next, after resist pattern 6 is formed on the upper face of layer 2, layer 7 of gold, platinum, Cr, and so on is formed. Next, ions of B<+> and so on are injected to layer 7 to harden layer 7. Next, the needless resist pattern on layer 2 is exfoliated, and layer 7 is hardened at approximately 250 deg.C by annealing to form the pattern of soft X ray absorbing layer 8 consisting of metal layer 7 of a large adhesion strength. Finally, pattern 5 is used as a mask to etch substrate 4, thereby forming soft X-ray transmitting layer 2 and support material 3. Otherwise, ions may be injected after forming pattern 8. Thus, strength of layers 2 and 8 is enhanced.

Inventors

  • 👤 Kazuhiro Tanaka

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-31 12:22
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/22

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