Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent disconnection of barrier metal and direct contact between Au or Al electrode with an Si substrate in a semiconductor device by perforating a PSG film on an SiO2 film, superimposing an SiO2 film thereon, and perforating smaller openings thereat to mount electrodes therethrough. CONSTITUTION:A transistor structure of planar type in which an SiO2 film 2a is coated entirely on the main surface of an N-type Si substrate 1 is formed, and an SiO2 film 2c is superimposed through a PSG film 2b. A resist mask 7 is coated, and is etched to form emitter opening 6 thereat, and a sufficiently thick SiO2 film 2a is retained for a base opening 5. Since the etching time of this case is short, an overhang is extremely small. Then, the mask 7 is removed, an SiO2 film 2d is coated thereon, a resist mask 7a is newly used, an opening having smaller size than the initial opening is perforated thereat, and SiO2 films 2d and 2a are completely etched. Since no PSG is formed thereat, no overhang is produced thereat. Subsequently, the mask 7a is removed, a platinum silicide 8, a barrier metal 9, and a gold 10 are attached as electrodes in the conventional manner, and a glass 11 is coated thereon. This configuration does not produce an overhang at the stop of the SiO2 film, and disconnection of barrier metal and reaction of Au-Si or the like are not generated.

Inventors

• 👤 Yuji Kusano
• 👤 Makoto Tanaka

Bibliographic Details