Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To stabilize an action of the device by forming a thick field insulating film around an active region of a semiconductor substrate surface and by building up high concentration buried impurity layer with a pan-shaped bottom extending over a dipth of the active region and just under the field insulating film. CONSTITUTION:Field oxidized films tapered at the ends are formed at the ends the surface of the active region 22 of the semiconductor substrate 20. The high concentration buried impurity layer 26 is established to be the pan-shape bottom by ion-injection, so as to be flat at the depth of the active region, curved upwards below the ends of the field oxidized films and touched to the inside of the field oxidized film just below the same. Whereby influences caused by a floating carrier in the substrate can be reduced and the action of the MOS type IC is stabilized.

Inventors

• 👤 Junji Sakurai

Bibliographic Details