Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the stepwise disconnection of an upper layer wire in an internal wire of a semiconductor device by laminating interlayer insulating layer between the upper and lower wires with an insulating laye formed by an ordinary vapor growth with a glass layer by a coating method and smoothening the surface. CONSTITUTION:An interlayer insulating layer 33 formed of SiO2 by a CVD method or the like is formed on a wiring pattern 32 formed of aluminum formed on a semiconductor substrate 31 formed of Si or the like and a glass layer 34 is coated by a spin-on glass method on the layer 33. Then, the stepwise part of the pattern 32 is charged to be smoothened. An SiO2 layer 35 is formed by a CVD method further thereon, and spin-on glass layer 34 is annealed by the heating in the step of coating the layer 35, and according no crack occurs. Eventually, the upper wiring layer 36 is formed.

Inventors

• 👤 Shohei Shima

Bibliographic Details